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Preparation and Properties of ZnO-Based Transparent Oxide Thin Films

Author: WangYunHua
Tutor: JiangDeLong；WangXin
School: Changchun University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: ZnO thin films RF magnetron sputtering Buffer layer Optical properties Electrical Characteristics
CLC: O484.1
Type: Master's thesis
Year: 2010
Downloads: 112
Quote: 0
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Abstract


ZnO is a wide range of uses novel of Ⅱ - Ⅵ multifunctional semiconductor material at room temperature band gap is 3.37eV, has good electrical and optical properties , is an ideal material to produce the UV detector pieces and ultraviolet light-emitting devices . Growth higher quality ZnO film is usually used sapphire , GaN , or ZnO single crystal as a substrate , because they are smaller ZnO lattice mismatch , but several materials are expensive, and poor conductivity , it is difficult to integrate . ZnO thin film grown on the Si substrate can be overcome the above disadvantages , but the monocrystalline Si and ZnO large lattice mismatch , a ZnO thin film of high quality is difficult to grow on the Si substrate . The papers by RF magnetron sputtering using high purity O 2 and Ar sputtering working gas . Of ZnO thin film on the Si substrate , and study of the ZnO film properties under various sputtering conditions . And then introduced into the ZnO lattice mismatch smaller Al 2 O 3 as a buffer layer , to further improve the quality of the ZnO film on the Si substrate . Finally p-Si/n-ZnO UV detector exploratory research .

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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