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The Study of Photoluminescence Properties of Pr3+ Doped SrTiO3 and CaTiO3 Thin Films Prepared by PLD Method

Author: WangWei
Tutor: ShenMingRong
School: Suzhou University
Course: Condensed Matter Physics
Keywords: RF magnetron sputtering ZnO thin films Transmittance The optical band gap PL spectra
CLC: O484.41
Type: Master's thesis
Year: 2009
Downloads: 57
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Abstract


The ZnO thin film is a direct band gap semiconductor material having a high exciton binding energy (60eV), exciton does not decompose even under ambient conditions, have a variety of uses, so in recent years, research on the ZnO-based semiconductor material increasingly important for people with CS-400 RF magnetron sputtering deposition pressure in order to study the impact of the the magnetron sputtering Zno film structure and properties, different deposition pressure (0.5Pa-5Pa) of on Si (111) and quartz substrate prepared ZnO films and 25% N atmosphere of 2 Zn 0.975 Cu 0.025 O films using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV - visible spectrophotometer analysis testing methods, research sample surface morphology, crystal structure, and optical properties. Focuses on the impact of the ZnO film structure and optical properties of different deposition pressure. The results are as follows: a. CS-400 type RF magnetron sputtering system successfully fabricated on Si (111) and quartz substrate ZnO thin films, the study of the structural and optical properties of ZnO films under different deposition pressure. XRD and SEM results show that a suitable deposition pressure under (> 2.0Pa), prepared well crystallized with good c-axis preferred orientation of ZnO film, with the rise of the deposition pressure, grain size larger smaller , the crystalline quality of the first good or to deteriorate, a lattice constant c of the film also increases, and the film (002) peak position offset toward the small angle was found by calculation. In the transmission spectrum of the ZnO film, found that more than 80% of the average transmittance in the visible region, the steep absorption edge around 380nm corresponding optical bandgap of about 3.23eV 3.27 eV as the deposition pressure rise changes very little. We believe that all of the optical properties of electromagnetic radiation effects are derived from substances Electronics, roughly similar to the PL spectra of ZnO thin films under different deposition pressure. Contrast ZnO thin films ZnO thin films prepared by pure Ar atmosphere and 25% N 2 atmosphere, however, due to the 25% N 2 atmosphere ZnO thin film structure and optical properties no big differences between the structural and optical properties of ZnO thin films prepared under pure Ar atmosphere, we believe that when using N 2 as a doping source, N 2 and are excited to become an active nitrogen, it is difficult to form a stable effective concentration of N-doped ZnO. The prepared Zn N 2 atmosphere different deposition pressure conditions. On 25% 0.975 Cu 0.025 O and ZnO thin film structure comparison. Zn 0.975 Cu 0.025 O film samples with good c-axis preferred orientation, the Cu doping to improve the C-axis preferred orientation of the film; Zn different deposition pressure 0.975 Cu 0.025 the O film XRD diffraction (002) peak in the deposition pressure 4.0Pa strongest FWHM the narrowest and grain size, ZnO film 2.0 Pa strongest diffraction peak, the FWHM of the narrowest and maximum grain size; of Zn 0.975 Cu 0.025 O film c-axis lattice constant than the ZnO thin film samples c axis lattice constant is large, so that the perpendicular to the C axis, the compressive stress is too large; With the increase of deposition pressure of Zn 0.975 Cu 0.025 O film tabular grains gradually reduced smaller spherical particles gradually increased; incorporation of Cu element in the sample, then the preferred orientation of the thin film deposition is more obvious, the particle size is reduced and the increased spherical particles, the film denseness enhanced, the thickness of the film is affected. Used in the experiment N 2 as the dopant source, is not detected the presence of N-Cu bond, so it is difficult to form a stable, effective concentration of the N-doped ZnO.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > The nature of the films > Optical Properties
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