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The 0.18um EEPROM products literacy and approach

Author: DaiHongGang
Tutor: WangPengFei；PengKun
School: Fudan University
Course: IC Engineering
Keywords: An electrically erasable programmable read-only memory 0.18 micron Checkerboard test
CLC: TP333
Type: Master's thesis
Year: 2011
Downloads: 47
Quote: 0
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Abstract


(Non-Volatile Memory) is an important part as the non-volatile semiconductor memory , the electrically erasable programmable read-only memory (EEPROM) applications has become increasingly widespread , and its application covers a smart card , automotive electronics, digital television , such as digital cameras, printers , fax machines and computers . Because the The EEPROM erase does not require the help of other devices , but electronic signal to modify its contents , and based on Byte for the minimum modifications units without all the information is erased to write , there have been a lot of vendors favor . The EEPROM cell consists of two transistors , a floating gate transistor ( FG ) , the other is a select transistor ( SG ) the select transistor (SG) is used to select the corresponding floating gate transistor in the programming and erasing the floating gate transistor (FG) can be stored charge. The amount of charge stored in the floating gate transistor can affect the device threshold voltage (VT), and thus to distinguish between the state during logic value 1 or 0. 0.18um EEPROM technology of production of electrically erasable programmable read-only memory (EEPROM) presence of low yield and reliability issues , mainly in the checkerboard to check the VALID , and a storage unit durability characteristics poor . The problem of low yield and reliability problems led to increased production costs , hindering large volume production of 0.18 EEPROM . Typical EEPROM unit has a stacked gate structure , the gate of the first buried oxide layer in the gate oxide layer and the inter-electrode between the oxide layer of the gate oxide layer and the between poles of the EEPROM data rewritable and data holding is critical , and a second gate called control gate, connected to it and the external electrode . Article by improving the quality of the gate tunneling oxide layer and the inter-electrode oxide layer , to improve the etching process of the floating gate , reducing the damage to the different degrees of etching caused by bad polysilicon , and the residue , the ultimate success solved checkerboard reading out the test the lapse and storage unit durability characteristics poor , high - yield production .

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CLC: > Industrial Technology > Automation technology,computer technology > Computing technology,computer technology > Electronic digital computer (not a continuous role in computer ) > Memory
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