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Study on Solid State Reaction of Metal/SiGe and Its Contact Characteristics

Author: XuYaoJuan
Tutor: RuGuoPing
School: Fudan University
Course: Microelectronics and Solid State Electronics
Keywords: NiSiGe Schottky barrier Thermal stability Contact resistance Alloy technology Situ XRD
CLC: TN304
Type: Master's thesis
Year: 2011
Downloads: 41
Quote: 0
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Abstract

With the integrated circuit device dimensions continue to shrink, making short-channel effects and other reasons to continue to improve the performance of the MOS device encountered a serious challenge, SiGe devices are introduced into the new structure, the strain produced by the channel to improve the channel contained carrier mobility, thereby improving the speed and performance of the device. In addition, shrinking device dimensions also make the source and drain regions of the MOS device parasitic contact resistance can not be ignored, reducing the source and drain contact resistance is small-sized devices have to study and solve a problem, Si-based devices through contact with the metal solid phase reaction to form self-aligned metal silicide do, in 45nm and below after entering, Ni has been considered the best contact with the metal material, but allows the introduction of germanium Ge silicide poor thermal stability, NiSiGe / SiGe contacts in the electrical aspects of the characteristics have not been extensively studied. In this context, this thesis Ni / SiGe solid state reaction as the research object, by evaporation, sputtering, rapid thermal annealing and other conventional means of technology and a series of phase, morphology, electrical characterization of the system solid phase response characteristics conducted in-depth research, made the following main results: 1. Ni (Pt) / SiGe reaction characteristics and forms a Schottky contact characteristics of Ni / SiGe formed by reaction NiSiGe has good phase stability, at 800 ℃ under high temperature will not change for Ni (SiGe) 2 phase, but poor thermal stability, as the temperature increases, (600 ℃ above) film began obvious agglomeration, making the film from the low-resistivity zone when the temperature characteristics of the Schottky contact is formed in degraded; into the Pt interlayer NiSiGe alloy technology can improve the thermal stability, delay the occurrence of agglomeration of the film (to 700 ℃), to form a more reliable Schottky contacts, a more uniform contact barrier. NiSiGe/n-Si0.84Ge0.16 contacts with the NiSi / n-Si Schottky barrier closest, is about 0.65 eV, Pt introduction of the Schottky barrier can be increased to 0.73eV; constant annealing at 550 ℃ temperature, the annealing time on NiSiGe film quality has a significant impact, especially when the annealing time exceeds 10 min, NiSiGe severe agglomeration of the film, resulting in higher rates of thin film resistors, diodes Schottky contact characteristics degradation. 2. Ni / SiGe solid phase reaction situ XRD studies using in situ XRD measurement test techniques Ni / SiGe solid state reaction were studied, observed Ni2 (SiGe), NiSiGe phase of sequential growth process and found NiSiGe with (130) preferred growth orientation. According to the obtained situ XRD peak phase information of the Ge thin film NiSiGe segregation phenomenon found Ge at a lower temperature (400 ℃) began to precipitate from the film, the lower the temperature, the segregation may longer required for testing in situ thermal stress imposed time-related. At lower temperatures the samples were heated in-situ XRD measurement, based on the diffraction peak of the phase change information, Ni2 (SiGe), NiSiGe two phases were dominated growth pattern with diffusion. 3.NiSiGe / p-SiGe contact resistivity of the substrate in the p-siGe Kelvin bridge structure produced samples, the NiSiGe / p-SiGe measurement of contact resistance, after the current \correction layer thickness measured after 10-7QΩ · cm2 got the order of contact resistivity.

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