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Copper diffusion barrier layer self-assembly process research

Author: ZhouTong
Tutor: ZhangWei
School: Fudan University
Course: IC Engineering
Keywords: Diffusion barrier layer Alloy Phase Diagrams Annealing temperature
CLC: TN405
Type: Master's thesis
Year: 2011
Downloads: 61
Quote: 0
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Abstract


As the feature size of integrated circuits continue to decrease, the back-end process of copper interconnect thickness of the diffusion barrier layer must constantly thinning. The use of conventional Ta / TaN layer structure as a diffusion barrier layer, the reduced thickness makes the RC delay and bring increased reliability problems. An effective alternative method is to use copper-based alloy diffusion barrier layer self-assembly. Cu-Mn and Cu-Al alloy have been successfully studied and forming a diffusion barrier layer, Cu-Mn alloy or Cu-Al alloy deposition is completed, the annealing temperature at a certain time, the original alloy layer becomes seed layer and the diffusion barrier layer. Phase diagram is to select and decide on the material formulation, method of preparation, processing and conditions of use basis. Alloy phase diagram is a diagram of the method of application, which means that the alloy composition, equilibrium condition and the external conditions (temperature, pressure, etc.) the relationship between the graph. Use of the existing system of equilibrium phase diagrams can learn at any temperature exists in equilibrium phase behavior and phase composition and so on. In 45nm, 32nm technology node, the thickness of the diffusion barrier layer has different requirements. To meet different technology nodes on the diffusion barrier layer thickness requirements, it is necessary to consider the annealing temperature and the alloy of the mole percent of the thickness of the diffusion barrier impact. By this calculation, and Cu-Mn phase diagram of Cu-A1 and further analysis obtained by the phase diagram of the model change with alloy annealing, by calculating node obtained by different techniques, to meet the different thickness of the diffusion barrier layer, different The annealing temperature, the corresponding element in the alloy range of mole percent; further discussion, given a specific annealing temperature and alloy of the mole percent values. In addition to annealing temperature and mole percent of the alloy elements, the annealing time will be the thickness of the diffusion barrier layer is affected. Based on a low temperature oxide growth-rate rule, the longer the annealing time, the thickness of the diffusion barrier layer is thicker. In addition, also the use of internal and external oxidation oxidation model to analyze the results using the Cu-Mn alloy, the annealing gas atmosphere by adding a small amount of oxygen will serve to reduce the effect of interconnect resistance. These results IC backend manufacturing copper interconnect process parameter settings have important guiding significance.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Microelectronics, integrated circuit (IC) > General issues > Manufacturing process
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