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Study on High-Electric-Field Degradation Effects and Temperature Characteristics of AlGaN/GaN HEMTs

Author: YangLiZuo
Tutor: HaoYue
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: AlGaN / GaN HEMT High-field stress Temperature characteristics
CLC: TN386
Type: Master's thesis
Year: 2010
Downloads: 186
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GaN has a large band gap , the breakdown field strength , thermal conductivity , and high electron saturation drift velocity , and has great potential in the manufacturing of high temperature and microwave power devices . Heterojunction AlGaN / GaN HEMT device in microwave high-power and high-temperature applications have obvious advantages , has become one of the hot , but not yet commercialized , mainly due to the AlGaN / GaN HEMT devices reliability issues also need more analysis and research . In this context a broad and in-depth research on AlGaN / GaN HEMT devices high-field stress reliability and temperature characteristics . The main research work and achievements are as follows : Firstly, given the complete process of self-developed AlGaN / GaN HEMT , manufactured with good characteristics of the sapphire substrate and SiC substrate AlGaN / GaN HEMT ; Secondly , indigenously developed AlGaN / GaN HEMT device field degradation effects been studied , focusing on the device degradation under several typical high-field stress , the key parameters of the device with the law of stress time degradation . Variable leakage through the device applied compressive stress and variable gate voltage stress of stress conditions on the device degradation , the results show that the degradation mechanism of the device in the on-state and off-state stress different emphases : in the on state , the ditch the channel hot electron effect is dominant in the OFF state , it is the dominant gate electron injection effect . In addition , combined with existing experimental results , proposed several measures to improve the high-field degradation effects , and provides direction to improve the device materials and processes ; Finally , the high-temperature properties and thermal storage characteristics of AlGaN / GaN HEMT . The study showed that: the case of high temperature , the material mobility decline is the main reason for the degradation of the transport properties of the device ; after short-term heat storage , the device performance improvement is caused due to trap electrons release . In summary, this article on a self- developed high-quality AlGaN / GaN heterostructure materials , through a series of process steps , successfully developed with the good characteristics of AlGaN / GaN HEMT, and device high field stress reliability and temperature characteristics were analyzed , and achieved satisfactory results .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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