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Design and Simulation of GaN-based LED’s Electrode Structure

Author: LiuYi
Tutor: LiPeiXian
School: Xi'an University of Electronic Science and Technology
Course: Materials Physics and Chemistry
Keywords: GaN LED Electrode structure Current spreading
CLC: TN312.8
Type: Master's thesis
Year: 2010
Downloads: 466
Quote: 1
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Abstract


Conventional GaN-based semiconductor light - emitting diode (LED) device on a sapphire substrate and epitaxial growth prepared , since the electrode is formed on the same side , the mesa structure , the current to transverse transport , easy to produce current crowding effect , resulting in the LED light emission , fever uneven. The qualitative analysis of the GaN-based LED , the current spreading effect , and found that the current density , n-GaN doping concentration and the current horizontal expansion of the effective length of the uniform expansion of the current has a great influence . SILVACO software , using two-dimensional finite element method simulation from the the LED work of physical mechanisms LED electrical characteristics . Compare the current distribution within the three different sizes of the LED device , the current density and L curve and found to reduce the current extended length L can improve the uniformity of the current . The extension of the surface current characteristics of the device plays a very important role . The use of finite element analysis software ANSYS, the the LED current expansion of the three-dimensional model to simulate the current expansion of the internal LED top surface current density distribution . Comparative analysis of four different electrode structure of the conventional 300um × 300um LED found the negative electrode of the L-shaped extension and ring expansion of the current distribution is more uniform . Followed to design and simulate three different strip-shaped electrode structure LED , comparison between the two current spreading relatively uniform structure , and may be used as the commercialization of stripe-shaped electrodes of the LED structure . Finally, for high-power LED of 1mm × 1mm , the four different electrode structure is designed , by simulation and comparison was found to reduce the current horizontal expansion of the effective length L can indeed improve the current uniformity . 5:00 and when inserted index , the current distribution of the most even in the same process parameters , interpolation type electrode structure . Five interpolation structure can be used as high-power LED electrode pattern .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor diode > Diodes: structure and performance > Light-emitting diodes
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