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PEDOT-PSS Schottky Contacts on ZnO

Author: HuWei
Tutor: ZhuYaBin
School: Beijing Jiaotong University
Course: Optical Engineering
Keywords: Zinc oxide Schottky junction PEDOT-PSS Spin-coating RF magnetron sputtering
CLC: TN304.21
Type: Master's thesis
Year: 2010
Downloads: 105
Quote: 1
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Abstract


ZnO is a direct wide band gap compound semiconductor materials, room temperature band gap of about 3.37eV, the exciton binding energy (60 meV). In recent years, ZnO nanomaterials have attracted widespread attention in the ultraviolet emission FET transparent conduction has broad application prospects, but can also be applied to the photodetector, electro-mechanical coupled sensors, inverter and biological machinery. Therefore, the preparation of high quality ZnO Schottky junction having a significance. The papers prepared using magnetron sputtering on SiO2 substrate ITO film as a conductive cathode, followed by reactive magnetron sputtering, spin coating method and vacuum evaporation method of ZnO film, PEDOT-PSS film and Au film, completed Au the / PEDOT-PSS/ZnO/ITO/SiO2 Schottky junction Preparation. Divided into the following sections: (1) radio frequency reactive magnetron sputtering ZnO thin films were prepared on glass and quartz substrates, XRD studies of different oxygen partial pressure on the structure of ZnO thin films. XRD results indicate that, when the growth temperature was 200 ° C Growth atmosphere of argon gas and oxygen gas: Ar: O2 = 20:10, the working gas pressure of 0.5 Pa, a sputtering power of 95W, the ZnO film has a minimum of (002) diffraction peak half-width and the (002) orientation. (2) ZnO thin film samples were placed in different temperature annealing, annealing ZnO nanostructures studied using X-ray diffraction (XRD). AFM and XRD results show that: after annealing at 850 ℃ ZnO thin film nano structural lattice of good quality, this method were prepared the ZnO films having better structural characteristics and high optical quality, for the further realization of the ZnO thin film device provides a species of feasible methods. (3) using the method of spin coating, on a glass substrate to prepare a PEDOT-PSS film, the resistivity of the films were measured using the method of the four-probe resistance measurement. The results show that: the increased with the temperature and rotational speed, the film thickness decreases, the better the uniformity of the film, the resistivity of the film did not change significantly. (4) in the ZnO film on the spin-coated PEDOT-PSS film, the Schottky junction is formed, tested the IV curves, analysis of the influence of the annealing on the characteristics of a Schottky junction, the results show: ZnO after 850 ° C oxygen annealing treatment makes SCHOTT 1.93 Less base junction photovoltaic characteristics have been greatly improved, when the Schottky junction reverse saturation current IS never annealing treatment 1.36 × 10-6A is reduced to 8.48 × 10-8A, the ideality factor n never annealing treatment as small as 1.16, and the Schottky barrier height φb never 0.72 eV when the annealing processing is increased to 0.79eV.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor > Oxide semiconductor
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