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Studies of Si(5 5 12) and Facets Observed on It by Scanning Tunneling Microscopy

Author: ZhaoShiGuang
Tutor: ZhuYongZhe
School: Yanbian University
Course: Optics
Keywords: Scanning tunneling microscope Facet Silicon surface Reorganization High index
CLC: TN16
Type: Master's thesis
Year: 2010
Downloads: 17
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Abstract


The use of traditional top-down the technology shrinks components scale method so far has reached its technical limits. Surface physics research the so-called bottom-up approach. Structured surface can be arbitrary making atoms, molecules, nano-scale quantum functional unit, in order to use Si (5 5 12) of the one-dimensional structure of Si (5 5 12) for the base production of nano-devices, revealing in the Si (5 5 12 the platform facet reasons, Si (5 5 12) observed on the surface of the smaller surface of a systematic study is necessary. ultrahigh vacuum scanning tunneling microscope (UHV-STM) system, we clean Si ( 5512) surface was observed. the facet facet and by measuring, Si (7 7 17) Si (5 5 12) appear alternately, the average of the two surface orientation in the [7717] to [5 5 12] between a flat surface, there will occur simultaneously on the platform of the Si (5 5 12), when the small side of the small surface of the Si (717) and Si (1 1 3) occurs when the width of the Si (7 7 17) facet. Si (3 3 7) facet, the facet of the Si (1 1 2), the small surface of the Si (1 1 1) was observed in the Si (5 5 12) platform to and measured their relative Si (5 5 12) the relative height of the platform if the height is greater than between the platforms of two Si (5 5 12) Si (1 1 1) -7 × 7 faceted Si (5 5 12) the height of the platform , Si (1 1 1) -7 × 7 facet occurs when two Si (5 5 12) between the platform height less than the Si (1 1 1) -7 × 7 faceted Si (5 5 12) the height of the platform and is greater than the Si (1 1 1) -5 × 5 faceted Si (5 5 12) the height of the platform, Si (1 1 1) -5 5 facet occurs when the two a Si (5 5 12) in height between the platform is less than the Si (1 11) -5 × 5 faceted Si (5 5 12) the height of the platform and is greater than the Si (1 1 2)-n × 2 faceted For Si (5 5 12) the height of the platform, the Si (1 1 2)-N × 2 facet occurs when two Si (5 5 12) between the platform height less than the Si (1 1 2) -n × 2 small surface with respect to the Si (5 5 12) the height of the platform and larger than Si (3 37) -2 × 1 faceted Si (5 5 12) the height of the platform, Si (3 3 7) -2 × 1 small surface will appear from the observed phenomena, we concluded that: in the process of forming on the surface, the surface tension and the driving force of crystal growth in a state of equilibrium so that the entire surface, uniform distribution of the surface of the platform and the stepped. surface morphology due to the influence of certain factors, such as the DC heated, the adsorption of impurities, defects, etc., will appear with the same structure as the morphology of the equilibrium state, so there will be a different variation of the height of undulation in the observed surface, but also means that the distribution structure of the ladder and the platform will follow changes therefore observed above to a variety of small surface the small surface of the Si (77 17) and the small surface of the Si (5 5 12) appear alternately, from Si ( 7717) to the Si (12) direction on the crystal surface is weak anisotropy γ-Plot tip becomes very obvious crystal equilibrium shape becomes connected by a rounded portion; in Si (5 512) of Si appears on the platform (17) the small side and the Si (1 1 3) Small surface appears no relationship, in some local under tension appears very wide Si (7 7 17) facet ; When the small surface of the Si (33 7), the small surface of the Si (1 1 2), Si (1 1 1) surface on the platform of the Si (5 5 12) occurs due to the small surface of the Si (1 11), the surface free energy minimum, followed by the small surface of the Si (1 1 2), is again the small surface of the Si (3 3 7), so they are different from the height difference, the position is different in which they appear. emergence of these small surface are mesoscopic surface recombination as well as under the the microscopic surface reorganization regular role.

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