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Ion Implantation on 4H-SiC MOS interface characteristics of study

Author: WangDeLong
Tutor: ZhangYuMing
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: Interface states Ion Implantation C-V characteristics Wet Oxidation
CLC: TN304.24
Type: Master's thesis
Year: 2010
Downloads: 95
Quote: 0
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Abstract


SiC material at a high temperature , high frequency , especially in conditions of high power and high radiation there is still a very superior performance , it is considered promising third generation of semiconductor material ; Meanwhile , SiC material Another advantage is in addition to Si it is the only material outside the thermally grown SiO2 through a semiconductor . Unfortunately , due to the inherent characteristics of SiC material and workmanship immature , so the quality is far SiO2/SiC interface SiO2/Si interface quality is good , the performance of the interface state density and high density of oxide traps . These factors led to the channel mobility is low and the 1 / f noise of the main high . In this paper, the n-type 4H-SiC MOS capacitors SiO2/SiC interface state density and high density oxide traps , adopting injection N / Al ions at the interface implemented in addition to carbon and nitrogen , to reduce the interface state density and oxidation trap density layer purposes. Based on the existing process conditions produced samples of three different processes , namely : direct wet oxygen oxidation and annealing treatment ; first injection of N ions , and then wet oxygen oxidation and annealing treatment process ; first simultaneous injection of N / Al ions, and then wet oxygen oxidation and annealing processes. Based on three different samples were prepared and tested for the CV IV testing . The use of high - frequency CV method to calculate the interface state density of the samples , the results down to 1011cm-2eV-1 in order to achieve the desired purpose of the experiment . Experimental results show that the N ion implantation before oxidation SiO2/SiC interface implemented in addition to carbon and nitrogen has a significant effect , the larger the extent, reduce the density of interface states ; wet oxidation and because the water vapor in the oxide layer introduces a number of negative charge compensating ions brought into the N positive charge , to obtain a small, flat band voltage . The results also show that Al ions are injected before oxidation slight increase SiO2/SiC interface state density , but it would be better to reduce the oxide trap density . Finally, through the IV characteristics of the samples discussed that ion implantation can cause reduced dense oxide layer and oxide breakdown characteristics deteriorate.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor > Ⅳ - Ⅵ compound semiconductors
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