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Dielectric Materials Electrical Noise Measure Technology and Application

Author: WangDong
Tutor: DuLei
School: Xi'an University of Electronic Science and Technology
Course: Materials Science and Engineering
Keywords: Low Frequency Noise Dielectric Materials Noise Measurement
CLC: TM206
Type: Master's thesis
Year: 2008
Downloads: 96
Quote: 2
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Abstract


With in-depth study of the noise theory, it was found that low-frequency noise can be a sensitive reflection of internal defects in electronic components, including material defect and potential defects in the device during manufacture or operation, the failure of most electronic components is caused by those defects., therefore, measurement of low-frequency noise of electronic devices can reflect its intrinsic quality and reliability. Noise measurement for characterization the reliability of electronic devices has been a wide range of research and application in worldwide. Some conventional electronic components noise measurement method is relatively mature, such as: MOSFET, Optocoupler, film and thick-film resistance, polycrystalline semiconductor materials. However, there still have a lot of noise measurement unresolved issues, such as: very low resistance (metal contact), dielectric materials (capacitors), the minimum current (anti-partial semiconductor junction) and the great current (power device), and so on.This paper study on dielectric materials (capacitors) noise measurement problem, mainly completed the following work:1. Detailed analysis of the traditional noise measurement why failed in measure dielectric materials (capacitors), and through in-depth study the noise measure and characterization technology, designed and achieve current noise measure systems.2. In the ultra-thin SiO2 gate dielectric layer leakage current noise measurements .we found in small stress conditions, the noise spectrum showing a 1 / f noise characteristics, and the noise increase with voltage stress growing .In larger voltage stress, observed the stress-induced leakage current, and found RTS noise in the stress-induced leakage current .3. By analysis the RTS noise signal in time / frequency domain, we found that the trap-assisted tunneling is the reason caused RTS noise, stress produced the SiO2 layer of silicon space traps, which trap and emitting electronics caused the RTS noise; and we also found the silicon vacancy traps in the SiO2 layer associate with voltage stress. When increase of voltage stress the number of traps will also be increased.4. We also measure noise in solid tantalum electrolytic capacitors by this method, by designed dielectric layer damage experiments, and can found this method is very sensitive to detect defects in dielectric layer, Noise after injury have a bigger amplitude value than before, and the value of.γchange clearly.5. In order to found out the influence of dielectric layer damage when work in AC state. We simulating the normal work state of capacitors, designed a kind of AC noise measure method, found that tantalum electrolytic capacitor dielectric layer damage in the low-frequency part of the reference signal reaction obvious.

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CLC: > Industrial Technology > Electrotechnical > Electrical materials > General issues > Performance test and measurement
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