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Study on the Micro-Infrared Radiation of Defects in CMOS

Author: TaoJianLei
Tutor: WangJiaZuo
School: Fudan University
Course: Materials Physics and Chemistry
Keywords: Infrared light
CLC: TH742
Type: Master's thesis
Year: 2008
Downloads: 56
Quote: 0
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Abstract


With the integrated circuit feature size of constantly decreases, and as an important link failure analysis of the failure location technology is also to make a corresponding change, traditional means of failure location in such a large area in the precise location of failure position has become impractical. Using CMOS IC structure defect of infrared light phenomenon can quickly failure position location, its sensitivity is also very high. This topic research work mainly focused on the study of CMOS IC structure of infrared light phenomenon. Including defects associated with infrared light, such as ESD protection circuit breakdown, latch effect, contact burr, etc. At the same time through the failure analysis of the typical case study, in the circuit and layout design and manufacturing technology search and analysis produces luminous defects root cause and mechanism. In the experiment, the use of the light emission microscopy (PEM) on the failure chip for defect positioning, and research on the back of the light emission microscope imaging model, and influence the observation results of various factors.

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CLC: > Industrial Technology > Machinery and Instrument Industry > Instruments, meters > Optical instruments > Microscope
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