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Preparation and Properties of Semiconductor Nanomaterials

Author: TianMing
Tutor: QuanShanYu
School: Shenyang University of Technology
Course: Condensed Matter Physics
Keywords: Semiconductor nanomaterials Template AIN nanowires ZnO thin films
CLC: TB383.1
Type: Master's thesis
Year: 2010
Downloads: 90
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Abstract


Of semiconductor nanomaterials its unique nature and quantum effects , makes plays an important role in the applications of the various functions of the device also has a critical influence on the future development of social information . This paper describes the preparation of the two semiconductor nanomaterials , characterization and testing of optical performance . First, the process of the template prepared AlN nanowires macro array . First, the use of self- loading grown monolayer ordered PS sphere template ; then using the evaporation method on the PS sphere template prepared monodisperse Al nanoparticles template . By scanning electron microscope observation , the Al nanoparticles prepared under different experimental conditions , PS sphere templates and template morphology characterization , which made the set of preparing single- dispersed metal nano - particles of the most effective methods of the template ; template method in temperature 1100 ℃, the thermostat time 240min , N2 gas 600torr conditions prepared by the orientation of the law , and uniform diameter , controllable macro AlN nanowire array . Second, the use of sol-gel prepared ZnO films . Zinc acetate dihydrate particles as the raw material, ethylene glycol monomethyl ether as a solvent , ethanolamine as a stabilizer, according to a certain molar ratio in solution ; to fully made ??sol was stirred in a water bath of 60 ° C ; by centrifugal spin coating machine spin into the ZnO thin film coating , after a 2-3min ; rapid heating and then said film into the tube furnace , and sintered at 300 ℃ for 10 min , and naturally cooled to the final deposition . In this thesis, the spin coating speed , the optical properties of the structure of the films prepared . The film samples crystalline structure using X-ray diffraction analysis , the results show that this method ZnO films with c-axis preferred orientation , with the spin-coating speed increases , the diffraction peak of the ( 100 ) and ( 101 ) crystal face. Gradually disappeared, the ( 002 ) diffraction peak enhancement and broadening , spin coating speed of the crystalline certain to grow . Using the UV - visible spectrophotometer testing the transmission spectrum of the ZnO films , studies show that the ZnO thin films prepared has a good light transmittance , light transmittance rate of 92% , and calculated using the relationship between the absorption coefficient and the forbidden band width of a film the band gap , the results show the optical bandgap of the ZnO thin film is increased as the spin coating speed increases , indicating that the spin coating speed can be realized within a certain range of the ZnO thin film optical forbidden band adjustable .

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CLC: > Industrial Technology > General industrial technology > Materials science and engineering > Special structural materials
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