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Surface Modification on Anode of Organic Light-emitting Diodes

Author: ChenXiangZhou
Tutor: YangLiYing
School: Tianjin University of Technology
Course: Condensed Matter Physics
Keywords: The organic electroluminescent device Anode Self- assembled monolayers Flexible Devices
CLC: TN312.8
Type: Master's thesis
Year: 2008
Downloads: 136
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Abstract


Organic Light-Emitting Diode (OLED) display technology is considered to be the most promising next-generation flat panel display technologies. Currently, people hot research focused on improving the performance and stability of the device. The organic electroluminescent device performance and the injection of carriers has closely relationship. Studies have shown that in order to achieve efficient injection of holes, the work function of the anode of the organic material adjacent to the highest occupied molecular orbital (HOMO) match. The ITO anode materials typically used with a typical hole transport material does not match the HOMO energy level. An ITO surface modification is to achieve the balance of carriers injected effective means. Flexible Organic Light Emitting Diode (FOLED) has a bendable, light weight, easy to carry and other advantages, is an important direction for the development of OLED. However, the polymer prepared on the substrate, ITO film and peeling and cracking when bent, causing device failure. Therefore, the study preparation process is relatively simple to replace the ITO film on the transparent conductive film is very necessary. In response to these questions, we conducted the following studies: 1. Using cyclic voltammetry (CV), with [Fe (CN) 6] 4-/3- redox probe ions is studied 4 - fluorothiophenol alcohol molecules on a gold electrode surface self-assembly behavior. The results showed that: at 0.5h at room temperature which can be self-assembled on the electrode surface to form a stable monomolecular film. 24h can be self-assembled on the electrode surface to form a dense monolayer, the surface coverage of approximately 95%. (2) studied the self-assembled monolayer modified metallic silver film electroluminescent device as a hole injection layer. Using the four-point probe (Four Point Probe), UV-visible spectroscopy (UV-vis), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and other tests used to study SAMs join For ITO performance. Preparation of the device structure is ITO / Ag / SAM / NPB / Alq3/LiF/Al classic double-layer structure devices. Studied the performance of the device with the conventional devices were compared. The effects of the metal thin film thickness and light transmittance, surface resistance between side port; surface roughness of the substrate surface with light transmittance and resistance between side port; with AFM optimize its thickness. The effects of silver film thickness variation effect on device performance. The results showed that: the ITO surface preparation self-assembled monolayer modified 5 nm thick metal silver film, you can keep the original anode based on transparency, enhance hole injection, improve the interface morphology, thereby increasing the device performance. Based on this, the device prepared ITO/Ag/SAM/m-MTDATA/NPB/Alq3/LiF/Al. Devices Qiliang voltage 4V, the maximum current efficiency 6.9 cd / A, maximum brightness of 34680 cd/m2 (12 V); higher compared to the ITO anode device 25300 cd/m2 (12 V). Exploration of the content behind the flexible device fabrication explore the conditions. 3 The study of self-assembled monolayer modified metallic silver film as a flexible electroluminescent device anode. The effects of metal film thickness and transparency, the relationship between the surface resistivity square mouth; using atomic force microscopy of the surface roughness of the substrate. Preparation of a flexible substrate and a flexible top-emitting devices emit. Flexible bottom-emitting device Qiliang voltage of 4V, 7V maximum current efficiency of 5.6 cd / A, 8 V when the device reaches maximum brightness of 27000 cd/m2. Flexible top-emitting devices Qiliang voltage is below 4V, at 6.5 V brightness reached 27760 cd/m2, 6 V at maximum efficiency reaches 7.38 cd / A.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor diode > Diodes: structure and performance > Light-emitting diodes
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