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BST films leakage current and soft breakdown characteristics

Author: HeXiaoXiang
Tutor: ZhangWanLi
School: University of Electronic Science and Technology
Course: Materials Physics and Chemistry
Keywords: PTCR BST thin Leakage current Soft Breakdown
CLC: TB383.2
Type: Master's thesis
Year: 2008
Downloads: 118
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Abstract


BST thin films with a high dielectric constant , low leakage current density , the Curie temperature is adjustable and excellent pyroelectric performance advantages can be widely used in uncooled infrared detectors , dynamic random access memory , a high dielectric constant capacitors , medium phase shifters, etc. the field of electronic information . In the application , the leakage current of the BST thin film is important to consider the electrical properties of one of the parameters , and therefore particularly important to study the leakage characteristics on the BST thin film . The thesis of BST thin films prepared by RF sputtering system to study the leakage current characteristics of BST thin , soft breakdown process reveals the mechanism of current limiting and soft breakdown mechanism . First, the study in the forward and reverse bias of the BST thin film leakage current J-V and the J-T characteristics . When the reverse bias , the upper electrode Pt and the BST thin film forming a Schottky contact , leakage current to follow the Schottky emission mechanism . Positive bias , BST thin films , and the lower electrode Pt interface there are a lot of interface states follow the space charge limited current (SCLC) mechanism so that the leakage current , the leakage current density increased with bias sharp increase with increasing test temperature of less small PTCR effect . Second, the study of the BST thin soft breakdown characteristics . Soft breakdown process is the process of oxygen vacancy trapping electrons and reduce the potential barrier . Specific performance soft breakdown current limit leakage current mechanism for the Pt / BST interface Schottky barrier before soft breakdown occurs between the grains , before the hard breakdown the double Schottky current limit , thereafter , with the oxygen vacancy trapping Electronic further increase in the film between the poles of a permanent channel hard breakdown . Within a certain time after the soft breakdown occurs , BST thin film can be restored , but the soft breakdown occurs after a longer duration , the recovery situation worse , film damage is more serious .

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