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Studies on the Formation of SiC Thin Films by Ion Implantation and the Photoluminescence Behaviors of Er3+

Author: GuoLiBin
Tutor: WangYuLin
School: Tianjin University
Course: Materials Science
Keywords: Carbon ion implantation Si5C3 3C-SiC Fluorescence spectroscopy Micro-Raman Grazing incidence X-ray
CLC: TB383.2
Type: Master's thesis
Year: 2007
Downloads: 79
Quote: 1
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Abstract


, Silicon carbide (SiC) as the third generation of semiconductor material having a wide bandgap, high thermal conductivity, and high saturation electron velocity, high breakdown electric field and other characteristics, which determines the silicon carbide devices can work in a high-temperature high-power, and in the aerospace , aviation, military, oil exploration, nuclear energy, communications and other fields has broad application prospects. Research SiC films the best ion implantation conditions has important theoretical and practical significance for the development of the semiconductor light-emitting materials. In this paper, ion implantation technology monocrystalline silicon substrate surface was successfully prepared polycrystalline 3C-SiC film study a different C is implantation dose, energy and heat treatment conditions for the formation of SiC films, as well as different conditions luminescence behavior of SiC films generated under light-emitting behavior; different of of Er 3 implantation dose and heat treatment conditions, SiC and ZnO-based body Er 3 . Experimental results show that when the C lower implantation dose of (1 × 10 17 ions / cm 2 ), since the C atoms is not sufficient to achieve SiC film is formed a stoichiometric ratio to obtain a similar The the FeSi substance-Si 5 C 3 . The substances identified using GXRD and XPS, FTIR and Micro-Raman results show that the the Si 5 C 3 substances in the Si-C bond vibration frequency less than 3C- SiC, Si-C bond of the vibration frequency. 3C-SiC film is formed, the surface of the Si substrate When C of the implantation dose is increased to 6 × 10 17 ions / cm 2 . AES experiments show that the C ions injected was in the depth of a normal Gaussian distribution, the TRIM simulation results match; surface morphology by scanning electron microscope (SEM) after the observed C injection; by X ray photoelectron spectroscopy (XPS), small-angle grazing incidence X-ray diffraction (GXRD) and micro-Raman (Micro-Raman) analysis were used to analyze C composition and phase structure of the surface of the material after injection; transmission electron microscopy (TEM), the experimental results show the presence of 3C-SiC nanocrystals; fluorescence spectroscopy (PL) and UV - visible absorption spectrum of its light-emitting properties of the test, the results showed that the luminescence of 3C-SiC film is mainly present in the UV zone. The fluorescence spectrometer measured using SiC, ZnO-based body Er 3 at 355 nm, 378 nm, 488 nm, 519 nm light excitation emission spectra. The results show that, with the C implantation dose increases, SiC base body Er 3 emission intensity is enhanced weakened C : 6 10 17 ions / cm 2 , Er 3 : 2 × 10 15 ions / cm 2 < / sup> emission intensity peak. The the ZnO substrate observed Er 3 of 4 the G 9/2 → 4 I 15 / 2 , 4 F 5/2 → 4 I 15/2 emission at 325 nm photoexcitation corresponding band-edge emission of ZnO nanocrystals exciton recombination emission. These results provides a theoretical and experimental evidence for ion implantation of Si substrate surface SiC film formation process optimization 3 , and SiC and ZnO-based body Er injection and its luminescent properties provide a valuable reference.

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