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Research on the Structure and Circuit of Resonant Tunneling Device

Author: LiuJingJing
Tutor: LiangHuiLai
School: Tianjin University
Course: Microelectronics and Solid State Electronics
Keywords: Resonant tunneling diodes Plane type RTD Process Circuit Simulation
CLC: TN312
Type: Master's thesis
Year: 2007
Downloads: 83
Quote: 0
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Abstract


Resonant tunneling diodes (Resonant Tunneling Diode) is based on the phenomenon of quantum tunneling a new type of negative resistance devices , it has the advantages of fast response , high operating frequency , low operating voltage , low power consumption, as well as multi-function and many other remarkable . Conventional CMOS devices gradually approaches the size limits , resonant tunneling devices has increasingly shown its importance . Tianjin University Telecommunications Institute research team of new semiconductor devices and integrated technology is the first successful development of RTD single tube units . At room temperature, the RTD single tube of the current peak-to-valley ratio reaches 7.6, the maximum oscillation frequency of 54GHz . On this basis , the research group and the National Key Laboratory also successfully developed the RTT ( resonant tunneling transistor) , its peak to valley current ratio PVCR up to 47 . After an introduction to the basic theoretical knowledge of the superlattice , a detailed analysis and study the works of the resonant tunneling diode , RTD has the physical meaning of the current - voltage equations through PSPICE voltage control current source to establish the DC model , and further discusses the factors that affect the RTD IV characteristics , so as to enhance the understanding of resonant tunneling devices . In addition , the lack of structure and process for traditional mesa type RTD proposed new planar structure resonant tunneling diodes produced with a new self-aligned process , not only to enhance the performance of the device , and be able to do with the silicon process compatible. Finally resonant tunneling devices part of the circuit , which laid the foundation for the research and design more complex circuits . In this thesis from the principle analysis of structural design, circuit simulation and test results of a comprehensive and rigorous discussion of resonant tunneling devices , laid the foundation to carry out further research and application tunneling devices .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor diode > Diodes: structure and performance
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