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Design and Research of 1.3μm GeSi/Si Heterostructure Optical Waveguide Coupler

Author: XuQinChang
Tutor: LiuShuPing
School: Taiyuan University of Science and Technology
Course: Fluid Mechanics
Keywords: GeSi / Si heterostructure Grating coupler Bragg reflector MBE sputtering method Two-beam interferometer Plasma etching
CLC: TN253
Type: Master's thesis
Year: 2008
Downloads: 59
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Abstract


In order to achieve information transmission in the electronic systems in large-scale and high-speed: high-speed electronic devices; optical waveguide interface chip. GeSi / Si heterostructure has obvious advantages in the application of these two aspects, this paper demonstrates the GeSi / Si heterostructure design and development of optical waveguide devices superiority and necessity, from the nature of the material, the band structure, pass optical properties, the structure and size of the device and the production process, the grating coupler and Bragg reflection grating in-depth study and exploration. First, characteristics of the transmission of light, according to the GeSi / Si heterojunction band structure analysis shows the proportion of each component of the SiGe alloy, so that the absorption limit of 1.3μm or less, thereby calculating the refractive index of the waveguide layer, the design a planar waveguide layer thickness. Then, based on the coupled-mode theory and application of MATLAB calculates the radiation attenuation coefficient of the grating coupler and the coupling coefficient of the Bragg grating reflector, symmetrical rectangular cross-section waveguide grating cycle design, length, width and depth of the groove, the dimensions of the tooth width. Numerical simulation analysis of the optical field intensity distribution devices. Three conclusions: 1.3? Ge 0. 05Si 0. 95/Si heterojunction single-mode coplanar Bragg reflection grating angle of incidence to 66 ° waveguide layer thickness of 2?, The grating length 4252? Groove depth 0.05? grating period of 0.456?, the filter bandwidth is 2.14 A0, the coupling efficiency can reach 84.1%. For 1.3? GE 05Si 0. 95/Si heterojunction rough design of the grating coupler, the waveguiding layer having a thickness of T = 2? Trough of the groove width and equal to the tooth width of the rectangle, the air side and the substrate side transmission angle (11) = 750 and theta? (13) ≈ 160 hours, periodic lambda ≈ 0.51μm groove depth hc = 0.085μm, the grating length L = 3mm, the coupling efficiency eta ≈ 37%, the input theta? The coupling efficiency was 29%. Ge 0. 05Si 0. 95/Si heterojunction grating coupler precise design, the waveguide layer thickness of 2.5 m, the incident wavelength of 1.3 single-mode Ge 0. 05Si 0. 95/Si heterostructure waveguide grating coupler The cycle length and the groove depth, the input derived from the air, the incident angle is 750 (input from the substrate, when the incident angle of 160), the cycle is 0.512μm, 0.256μm groove width, the grating length is 2.3mm from the air side of the input coupling efficiency η (c) = 22.5%, the substrate input coupling efficiency η (s) = 46.3%, for the output coupling when the coupling efficiency η (c) = 28%, η (s) = 57.8%. The production process and device testing carried out in-depth research, the production process MBE sputtering method, dual-beam interference method and plasma etching; propagation constant and coupling efficiency of the device through the prism coupler and grating coupler were measured.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Optical waveguide and integrated optics > Fiber optic components
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