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Preparation and Electromagnetic Property Research of Si Based LSMO Thin Films and Heterojunctions

Author: WangLei
Tutor: YangWei
School: China University of Petroleum
Course: Materials Physics and Chemistry
Keywords: La0.7Sr0.3MnO3 film La0.7Sr0.3MnO3/Si p-n junction Magnetron sputtering Magnetoresistance effect
CLC: O484.1
Type: Master's thesis
Year: 2008
Downloads: 103
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Abstract


Perovskite structure oxide film is a function of the material of the current international concern . La1-xSrxMnO3 (LSMO) , lanthanide rare earth manganese oxide due to their excellent electromagnetic properties and large magnetoresistance effect , so that it has a broad application prospects in the field of information technology . This article by magnetron sputtering method the La0.7Sr0.3MnO3 film of perovskite structure was prepared in the intrinsic Si ( 100 ) and doped n-type Si (100) , analysis of the deposition temperature , annealing applied magnetic field on La0.7Sr0 .3 MnO3 film electromagnetic characteristics and atmosphere , temperature , external magnetic field La0.7Sr0.3MnO3/Si pn junction rectifier characteristics . Ellipsometer , X - ray diffraction (XRD) and scanning electron microscopy (SEM) of the film sample . Main results are as follows : ( 1 ) La0.7Sr0.3MnO3 - film samples prepared in the temperature of the substrate , the annealing temperature and applied magnetic field a different occurrence of metal - insulator transition temperature also different . Annealing as the oxygen content increases , the Curie temperature increased; applied magnetic field so that the transition temperature of the sample metal - insulator (MI) (TMI) is moved in the high temperature zone ; increased as the substrate temperature increased , TMI . (2) When the applied bias current is increased , the film La0.7Sr0.3MnO3 - TMI gradually move to the low temperature peak resistance (Rp) decreases continuously . ( 3 ) La0.7Sr0.3MnO3/Si the pn junction Sample prepared atmosphere conditions and annealing conditions different electrical properties of a sample is also different. The electrical properties of the prepared under an atmosphere of Ar and O2 La0.7Sr0.3MnO3/Si pn junction is preferably , to be significantly better than the sample made ??of a nitrogen atmosphere of argon , and pure argon ; annealing helps to improve the rectifying properties of the samples and annealing time samples rectifier performance impact annealing 10min rectifier best performance . (4) La0.7Sr0.3MnO3/Si heterojunction within a very wide range of temperatures (80K-300K) shows a good rectifying characteristic , and as temperature increases, the rectifying effect improved ; while the the sample to low magnetic field sensitive 0.3T of the magnetic field , the magnetic resistance can be as high as 60% , the magnetoresistance sign dependent on the temperature , above the Curie temperature , show positive magnetoresistance , the following shows the negative magnetoresistance . The size of the magnetic resistance can be adjusted by the voltage .

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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