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Study on Micro Sturcture and Process Design of Vanadium Oxide Bolometers

Author: MaXianJun
Tutor: HuMing
School: Tianjin University
Course: Microelectronics and Solid State Electronics
Keywords: Bolometer Vanadium oxide Porous silicon MEMS
Type: Master's thesis
Year: 2008
Downloads: 133
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In recent years, the use of micro- mechanical uncooled infrared detectors thermal imaging is the hot areas of research in the field of MEMS and optical imaging . Laboratory bolometer device first prepared experience study , analysis of the existing problems in the preparation of the device design and process proposed optimization program , and select the better thermal properties of vanadium oxide on the silicon oxide base film , MEMS-based sacrificial layer and the insulating layer of the porous silicon process preparation parameters , improved original process preparation programs, while the manufacturing process of the development of the insulating layer of the porous silicon - based bolometer . Thesis by DC Magnetron Sputtering method in the preparation of silicon nitride and oxide on a silicon substrate oxidation film , and its thermal performance testing , the study shows that the vanadium oxide films prepared on oxidized silicon substrate has a better infrared detection performance, sensitive thin film of oxide on a silicon substrate at the same time subjected to a heat treatment , XPS analysis showed that the high temperature annealing will procure the total price of the vanadium oxide films of V states reduced, the distribution of the thin-film crystal grains uniform and compact, and the film surface is more flat , TCR value up to -3.2% / K . Second, the study of the corrosion time and the corrosion current density of the structure and properties of porous silicon micro , confirmed the electrochemical method for the preparation of porous silicon growth rate was increased and then decreased to discuss the sacrificial layer and insulation material in MEMS technology performance requirements, determine the different application process of the preparation parameters of the porous silicon , and the sacrificial layer of oxidized porous silicon is applied device . Theoretical analysis and structural design optimization, using the support layer film is first to protect the porous silicon , the use of infrared absorption membrane protective vanadium oxide sensitive layer , and improved the sacrificial layer of porous silicon - based bolometer meter on the device structure and preparation process of the bolometer the fabrication process of preparation of vanadium oxide bolometer technology based on porous silicon insulation layer .

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