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Preparation and Properties of Ni-doped ZnO Thin Films

Author: LiuXiaoXue
Tutor: ShiWangZhou
School: East China Normal University
Course: Condensed Matter Physics
Keywords: ZnO thin films Ni-doping fluorescent emission Dilute magnetic semiconductors DMS
CLC: O484.1
Type: Master's thesis
Year: 2006
Downloads: 221
Quote: 0
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Abstract


ZnO is a self-activated crystal of hexagonal wurtzite structural. The notable properties of ZnO are its wide band gap of 3.36 eV at room temperature (RT) and high exciton binding energy (60 meV). Therefore, ZnO is of interest for low-voltage and short wavelength (ultraviolet (UV), blue or green) light emitting devices such as light-emitting diodes and diode lasers. On the other hand, ZnO is also an outstanding semiconductor. Computational studies have predicted ferromagnetism above room temperature for several ZnO-based DMSs through doping Cu, Mn and Ni in ZnO films, which makes the ZnO be a potential material used in spin electronic devices. In this paper, PLD was used to deposit Ni-doped ZnO thin films onto Si (100) substrates at room temperature, the different Ni contents had an effect on the critical structure of the films, the relationship between the doping contents and the fluorescent emission properties is studied, the influence of doping contents on dilute magnetism of the thin films also is investigated. Besides these, the films with excessive Ni doping in ZnO were prepared, the microstructures and fluorescent emission properties of these films were studied and analyzed. Based on hereinbefore, the main results are as follows: 1. Ni-doped ZnO films were deposited on Si (100) by pulsed laser deposition (PLD) at room temperature. Two peaks centered at about 360 and 380 nm were observed. The origin of the ultraviolet peak at 360 nm was investigated through doping Ni into the ZnO films. It was found that the intensity of this ultraviolet peak changed with Ni content while its position remains stable. Fluorescent emission of the samples was optimal when Ni:ZnO was 5 mol%, indicating that the peak centered at 360 nm might originate from the composite transition between the splitting valence band and conduction band,

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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