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On Mathematic Analysis of the Viscous Quantum Hydrodynamic Model in Semiconductor

Author: HuangXue
Tutor: ZhangKaiJun
School: Northeast Normal University
Course: Applied Mathematics
Keywords: Viscous quantum hydrodynamic model The existence and uniqueness of the solution Inviscid limit zero-space-charge limit
CLC: O471.1
Type: Master's thesis
Year: 2005
Downloads: 38
Quote: 0
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Abstract


Viscous quantum hydrodynamic model derived from physics, has a certain practical significance and theoretical value , is also an important part in the semiconductor research . Viscous quantum hydrodynamic model by the electron density n the two conservation equation satisfied by the current density J contains two conservation equations are derived by the Wigner-Fokker-Planck model equations and the Poisson equation , the third-order quantum entry and the second viscous term object of this paper is the one-dimensional steady-state viscous quantum hydrodynamic learning model we study the existence of solutions of this model under the physical significance Dirichlet boundary conditions and Neumann boundary conditions , only two important asymptotic limit of this article first use of index variable substitution the method of transformation of the problem for the fourth order elliptic equations to study . truncated a priori estimates of the technology to build solutions and weak subsonic conditions , the fourth-order equation weak solution on this basis, according to the Leray-Schauder fixed point theorem existence next we prove sufficient conditions for the relevant physical parameters in the model equations only . article last verify the inviscid limit and zero-space-charge limit .

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CLC: > Mathematical sciences and chemical > Physics > Semiconductor physics > Semiconductive Theory > Semiconductor quantum theory
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