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In recent years, the ferroelectric thin film materials preparation , structure , performance and application has become a hot topic in the research of new materials . Ferroelectric thin films with good piezoelectric , pyroelectric , ferroelectric , electro-optical and nonlinear optical properties , can be widely used in micro-electro-mechanical systems , ferroelectric memory and pyroelectric infrared detectors , and thus subject to widespread concern. PZT thin film materials are currently studied in a class of materials , it has a high spontaneous polarization , a relatively low dielectric constant and loss , is the preparation of the pyroelectric thin film uncooled infrared detector material of choice for one . The papers from the experimental PbZr0.3Ti0.7O3 [ PZT ( 30/70 ) ] and PZFNT [Pb ( Zr0.58Fe0.2Nb0.2Ti0.02 ) O3 film preparation process , microstructure and properties were systematically studied . PZT thin films were prepared by rf magnetron sputtering method on the the 5 inch Pt/Ti/SiO2/Si substrate and film rapid thermal annealing . AFM and XRD analysis as well as performance testing , the results show that : the preparation of the film has good dielectric , ferroelectric and pyroelectric properties under optimized conditions , the pyroelectric coefficient, dielectric constant, loss, remanent polarization and the detection of merit were 2.09 × 10-8C/cm2K, 630,1.4%, 26μC/cm2 and 2.81 × 10 9Ccm / J , basically meet the requirements of of pyroelectric on film material properties . Also some rules of film preparation process parameters on the film microstructure and performance impact . In addition, using RF magnetron sputtering on in a 5 inch Pt/Ti/SiO2/Si and PZT/Pt/Ti/SiO2/Si substrate preparation the PZFNT film post-processing using rapid thermal annealing process . Both films were analyzed, the experimental results show that using PZT buffer layer can significantly reduce the crystallization temperature of the PZFNT film and PZFNT properties of the film has a significant effect , so that the dielectric and the ferroelectric properties improved . Pyroelectric coefficient obtained under optimal conditions , 6.4 × 10-9C/cm2K, dielectric constant and loss for 1328 and 3.1% respectively , remanent polarization of a 29.8μC/cm2 the ferroelectric film , the film is expected to ferroelectric memory and pyroelectric infrared detectors .
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