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Defects Study of Partical-irradiated GaSb by Coincidence Doppler Broadening Measurment

Author: SuBenFa
Tutor: WangZhu
School: Wuhan University
Course: Microelectronics and Solid State Electronics
Keywords: GaSb Coincidence Doppler broadening spectra Source Correction Defect Irradiation
CLC: TN304.2
Type: Master's thesis
Year: 2005
Downloads: 95
Quote: 0
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Abstract


A Ⅲ - GaSb material is-V group compound semiconductor material, it is a direct bandgap semiconductor, OK under the forbidden bandwidth degree 0.822eV 300K lower bandgap of 0.725eV. The lattice constant 0.60959nm, this value is located between various ternary and quaternary Ⅲ - Ⅴ compound semiconductors, and thus it can with the various materials? Match the lattice constant. The narrow band gap and lattice matching nature has important applications in the the GaSb material in the production of optoelectronic devices and long-wave laser. In addition, due to the recent 2-4μm development needs of low-loss optical fiber, GaSb materials have more depth. The presence of a defect of the semiconductor device has an important effect, studies have been many reports on GaSb material defects. Currently there are a number of problems have constrained GaSb materials in the device fabrication, such as: no matter what kind of preparation conditions, undoped GaSb exhibit p-type conductivity. The research results show that the V Ga Ga Sb may cause residual acceptor. Positron annihilation spectroscopy is an important tool for the study of semiconductor defect, it is a non-destructive detection techniques, including positron annihilation lifetime spectroscopy, in line with the Doppler broadening spectrum and angular correlation spectroscopy. Annihilation radiation carried by the electron density and electron momentum density positron vacancy-type defects are extremely sensitive, it can be analyzed to study vacancy-type defects in the material. Positron annihilation lifetime spectra is related to the electron density information given can be quantitative or semi-quantitative single vacancy, the charge state of the divacancy or vacancy cluster density information as well as different vacancy-type defects. Positron annihilation radiation contains a very detailed electron momentum distribution of information, low momentum part of the Doppler broadening spectrum corresponds to the positron conduction electron or valence electron annihilation momentum, high momentum part mainly reflects the core electronic The momentum distribution of information, and therefore confidence in the research of high-momentum part of the annihilation Doppler broadening spectrum around the defect by analyzing the chemical environment. However, due to the traditional single-probe Doppler broadening measure the background is very high, high momentum electron annihilation is actually concealed in the measurement of the background, and not be able to get useful information. Coincidence Doppler broadening system using two probe measurements on a γ photon annihilation radiation energy in line, get in line with the Doppler broadening spectrum the bottom greatly reduce, the resolution also greatly improved, making the study defects chemical surroundings possible. This project is funded by National Natural Science Foundation and the Natural Science Foundation of Hubei Province. In this paper, the Doppler broadening spectrum source correction method based on the use of proton irradiation and electron irradiation defect structure on GaSb material meet the Doppler broadening spectroscopy and positron lifetime spectroscopy. The main results are as follows: 1. Discussed source ingredients coincidence Doppler broadening spectra data analysis, and the least squares method

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor
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