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Influence of Interface on Properties of PZT Ferroelectric Thin Film

Author: ZhangJingJi
Tutor: LaiZhenZuo
School: Nanchang University
Course: Materials Physics and Chemistry
Keywords: Perovskite structure Ferroelectric PZT thin films LNO electrode Interface RF magnetron sputtering
CLC: TB383.2
Type: Master's thesis
Year: 2006
Downloads: 261
Quote: 2
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Abstract


ABO 3 -perovskite structure ferroelectric thin film is a ferroelectric material, its dielectric constant can up to 10 of 2 to 10 6 has excellent ferroelectric, piezoelectric, pyroelectric, electro-optic, acousto-optic and nonlinear optical properties, has incomparable superiority of other materials, making it in infrared detectors, non-volatile memory, and electro-optical devices, electromechanical coupled device, and many have broad application prospects. Since the 1990s, has been the forefront of research in the field of the new functional materials and Popular PZT large remanent polarization, particularly by people of all ages. For films, may occur in low temperatures and even at room temperature, a significant reaction or interdiffusion. However, the interdiffusion between the ferroelectric thin film / substrate interface the crystalline membrane bad ferroelectrics performance has not been able to get a good solution. The basic structure of the PZT thin film device is a ferroelectric thin film is sandwiched between the performance as a conductive film on the upper and lower electrodes constituting the \porous Si (111) [referred to as PS-Si]) Preparation of ferroelectric PZT thin films, the analysis interface on the performance of ferroelectric PZT thin films. The main content of the work include the following aspects: (1) LNO bottom electrode made of each of the p-Si substrate, LNO bottom electrode film is deposited at different substrate temperatures, the process by different annealing temperatures. LNO film deposited at room temperature XRD analysis, after 500 ℃, 550 ℃ temperature annealing 30mins, Ni 3 Si (111) peak, LNO film perovskite phase (100 ), (110), (111) and (200) polycrystalline orientation; with the substrate temperature, Ni 3 Si (111) peak decreases, the LNO perovskite phase (200) peak enhanced performance for preferred orientation (100). (2) Preparation of PZT ferroelectric thin films LNO / p-Si substrate sputter deposition of ferroelectric PZT thin films, the results show that the PZT thin films deposited at the substrate temperature of 260 ℃ appear weak perovskite structure ( 111) diffraction peak; annealing at 650 ℃ 15mins treatment, in addition to the the original PZT perovskite phase (111) peak (110) and (200) peaks, the strongest of the (110) peak; PZT thin films by annealing the surface relief has increased, the ferroelectric properties have been greatly improved, reducing leakage current by three orders of magnitude. (3) PZT / Si interface of PZT Ferroelectric Thin Films

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CLC: > Industrial Technology > General industrial technology > Materials science and engineering > Special structural materials
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