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PECVD prepared aC ??: F : N film structure and stability

Author: ZhangYunFang
Tutor: LiuXiongFei
School: Central South University
Course: Condensed Matter Physics
Keywords: Film a-C: F: N PECVD Thermal stability The optical band gap
CLC: O484.1
Type: Master's thesis
Year: 2005
Downloads: 48
Quote: 0
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Abstract


Fluorinated amorphous carbon film is important for VLSI a low dielectric constant material as a dielectric film of its thermal stability temperature planar process (400 ° C) temperature requirements must be met, fluorinated amorphous carbon films low dielectric constant and high thermal stability between a mutually restrictive relationship, how to ensure the aC: F films permittivity is relatively low at the same time maximize the thermal stability become the subject of much attention. This selection of the combination of the two gases: the CF 4 / CH 4 / Ar and CF 4 / CH 4 / N 2 , PECVD method, polishing of silicon wafers and quartz plates prepared fluorinated amorphous carbon (aC: F) and nitrogen trifluoride-doped amorphous carbon (aC: F: N) films , and the film prepared from the annealing process. Ellipsometer to measure the thickness of the film before and after the annealing, characterized by the thermal stability of the film, with its rate of change, studies show that changing the deposition temperature, the RF power and the annealing temperature can increase the thermal stability of the aC: F films, but rely solely on the change The process parameters to improve the thermal stability is very limited. This paper focuses on the impact of nitrogen-doped thermal stability of fluorinated amorphous carbon films. Annealed aC: F: N film thickness change rate than aC: F film greatly reduced, can improve the thermal stability of aC: F films doped with nitrogen. FTIR analysis showed that nitrogen effectively incorporated into the aC: F film formed aC: F: N films. Film Research FT-IR, Raman analyzed: nitrogen-doped sp 2 key state content was significantly higher in the film, which further proved can improve the thermal stability of aC: F films doped with nitrogen. AC: F: N film of the absorption coefficient α and photon energy hυ correspondence relationship, the optical band gap of the film was determined according to the UV-VIS transmission spectroscopy. Cluster model proposed by Robertson explained the nature of the changes in the optical band gap is due to the film of the number of aromatic rings or sp 2 cluster diameter change, or because sp 2 content change of key state, given the relationship between the optical band gap of the film with thermal stability, and that increasing the deposition temperature and to increase the flow ratio of the thermal stability of the film can be improved, and the deposition temperature and flow ratio was increased to The thermal stability of the film after the certain extent will remain substantially unchanged.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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