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IrO 2 films due to their good oxidation resistance , strong catalytic activity and good corrosion resistance , etc., can be widely used electrode materials, microelectronics , solid-state fuel cells and gas sensors , and many other fields. Paper, based on pulsed laser deposition (PLD) technique , in Si (100) substrates were prepared IrO 2 film . Focuses on the oxygen partial pressure , substrate temperature , laser output energy , target spacing PLD process parameters and subsequent annealing the structure and performance, in order to obtain high-quality IrO 2 film . The results showed that: various process parameters for the film a great influence on the phase and structure of the lower partial pressure of oxygen not pure polycrystalline IrO 2 film , the substrate temperature , laser energy , the distance between the substrate and the target , the annealing temperature orientation and morphology of the film . By IrO 2 thin film growth conditions of exploration, found a growing high-quality IrO 2 Films optimal conditions : oxygen partial pressure 20Pa, substrate temperature 500 ℃, the laser energy 140mJ , the distance between the substrate and the target 50mm, annealing temperature of 700 ~ 750 ℃. XRD, SEM and AFM tests showed : under this condition deposited IrO 2 thin film along the ( 101 ) oriented growth , uniform thickness , clear interface , a good combination with the silicon substrate surface , the surface roughness degree of 3.9nm. Using the four-probe technique measured IrO 2 film resistivity at room temperature reaches 37 ± 1.5μO · cm, already very close to the bulk single crystal IrO 2 thin film resistivity , suitable for use as an electrode material .
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