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Monte Carlo Simulation of Dose Enhancement Effect of Semiconductor-metal Interface

Author: ZhouYinXing
Tutor: MaYuGang
School: Jilin University
Course: Particle Physics and Nuclear Physics
Keywords: Monte Carlo method MCNP X-ray Dose enhancement factor Packaging material / metal layer -Si Semiconductor - metal interface
CLC: O472
Type: Master's thesis
Year: 2006
Downloads: 82
Quote: 3
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Abstract


Semiconductor device with the structure of “Packaging /Metallizing-Si”would be damaged by X-rays or gamma rays, the reason is that thecross-section of photoelectric effect in high-Z (atomic number) material ismuch larger than in low-Z material for low-energy rays, and accordingly whenthe packaging or metallizing is made of high-Z materials, there will be anonequilibrium fluxion of photon-electron between the high-Z region andlow-Z region because of the different consistencies of two regions. Therefore,the Dose Enhancement Effect appears in the silicon with the additionalphotoelectrons diffusing from the high-Z material via the interface,and thedose enhancement factor, called DEF for short, is a important parameter inDose Enhancement Effect, and which is defined as follows.DEF=dose of sensitive region/equilibrium doseSince the semiconductor device is very small and easily damaged, it isdifficult to measure the dose distribution and the dose enhancement of thesemiconductor-metal irradiating with X-rays in experiment. Therefore, theDose Enhancement Effect of the semiconductor-metal interface from differentpackaging and metallizing is usually obtained by theoretical calculations.In this paper, the essential principles of Dose Enhancement Effect ofvarious material interfaces and laws of interaction between gamma-rays andmatters are detailedly introduced. Dose enhancement of simple Au-Si model iscalculated by the photon-electron coupling transport Monte-Carlo method, andthe result is consistent with Garth’s data which is affective to this field. So theMonte-Carlo method is feasible to calculate the Dose Enhancement Effect ofPackaging/Metallizing-Si. Then the semiconductor-metal interface models of“Packaging/Metallizing-Si” are established, according to these models, dosedistribution and dose enhancement factor (DEF) near the interface arecalculated, and dose enhancement effect of the various packaging andmetallizing is discussed as well.Dose distributions and Dose Enhancement Factors of Au/Au-Si,Au/Schottky-Si, Au/Al-Si, Kovar/Au-Si, Kovar/Schottky-Si, Kovar/Al-Si,Ceramic/Schottky-Si, Ceramic/Au-Si and Ceramic/Al-Si are obtained. Theenergy range of X-rays, where the Dose Enhancement Effect occurs, ispresent.

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