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Fabrication and Characterization of Bst Thin Film

Author: SunJie
Tutor: LouJianZhong；LiuBaoTing
School: Hebei University
Course: Microelectronics and Solid State Electronics
Keywords: Ba0.6Sr0.4TiO3 thin film Amorphous Ni-Al barrier layer CeO2 buffer layer RTA Conduction mechanism
CLC: O484.1
Type: Master's thesis
Year: 2010
Downloads: 32
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Abstract


Ba0.6Sr0.4TiO3 （BST） thin films are prepared on Pt/TiO2/SiO2/Si（001） substrates using sol-gel method, and the related capacitors with Pt electrodes are fabricated using magnetron sputtering method with a shadow mask. Dependence of the structure and physical properties of Si-based Ba0.6Sr0.4TiO3 film annealed by rapid thermal annealing （RTA） at temperatures ranging from 650°C to 850°C is investigated. XRD measurements indicate that the sample annealed at 650°C is amorphous, and the other samples with perovskite structure are polycrystalline. It is found that BST intensity increases with increase of annealing temperature at first; and then decreases with annealing temperature. The dielectric constants of BST samples annealed at 700°C and 750°C, measured at zero-bias electric field, are 166, 193, respectively. It is found that all the prepared BST films show Ohmic-like conduction at low voltages except for the 650°C annealed BST sample, for which Ohmic conduction covers the whole measured electric field range; BST films annealed at 700°C, 750°C and 800°C demonstrate Poole-Frenkel emission conduction at high electric fields, while BST film annealed at 850°C presents Schottky emission behavior.Pt/Ni-Al/Ba0.6Sr0.4TiO3/Ni-Al/Pt capacitors are fabricated on Pt/TiO2/SiO2/Si（001） substrates using RF magnetron sputtering and sol-gel methods. Dependence of the structure and physical properties of Si-based Ba0.6Sr0.4TiO3 film with amorphous Ni-Al diffusion barrier layer is investigated. It is found that the maximum dielectric constants of BST samples annealed at 700°C and 750°C, measured at the electric field of -100 kV/cm, are 150, 170, respectively. The amorphous Ni-Al layer can efficiently reduce the leakage current density of Pt/Ni-Al/BST/Ni-Al/Pt capacitors, and the leakage current density is half order of magnitude lower than that Pt/BST/Pt capacitors fabricated by the same condition and method.The study of the Si-based epitaxial Ba0.6Sr0.4TiO3 thin film. Firstly, Ba0.6Sr0.4TiO3 thin films are prepared on Pt/TiO2/SiO2/Si（001） substrates by pulsed laser deposition. The maximum dielectric constant of the sample fabricated at 650°C is 260; and the dielectric loss, tunability, leakage current density, measured at the electric field of -417 kV/cm, are 0.055, 23% and 2.9×10-5 A/cm2, respectively. Secondly, Highly oriented CeO2 buffer layers are prepared on Si（001） substrates by PLD technology using two-step growth method, which establish the foundation for the Si-based epitaxial BST thin film.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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