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Modulation of the Broad-Area Diode Lasers with Facet Reflectivity

Author: WangZuo
Tutor: BaoBaoXue
School: Changchun University of Science and Technology
Course: Optical Engineering
Keywords: Wide strip semiconductor laser Transverse mode selection Distribution reflectivity cavity mask Beam quality
CLC: TN248.4
Type: Master's thesis
Year: 2007
Downloads: 73
Quote: 0
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Abstract


Wide stripe semiconductor laser , even in the case of low current injection also multiple - order transverse mode lasing ( along the junction plane direction ) and thus lead to poor beam quality . A SiO avoid the high order mode in order to enhance the lateral mode selection , the design of a simple structure and process of 100μm width of the wide strip in the injection zone the output of the semiconductor laser cavity surface deposition contour distribution < / sub> AR coating , antireflective film in the transverse direction ( parallel to the plane of the junction direction) provides a nearly Gaussian distribution reflectivity . The paper gives a specific process , more a test of whether the distribution of the characteristics of the laser antireflection coating and beam quality , coated slope efficiency of 0.84W / A up to 1.00W / A . The horizontal direction of the far-field divergence angle decreases , the beam quality factor M 2 < / sup > smaller . The discussion and analysis of the principle of the distribution of the reflectivity of the cavity mask the cavity diffraction mode of modulation, and analyze coating accuracy of the exit beam quality .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Laser technology, the maser > Laser > Semiconductor lasers
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