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Study on Radio-Rrequency Reactive Magnetron Sputtering for the Single-Phased Ag2O Films for Optical and Magneto-optical Storage

Author: MaZuoMin
Tutor: ZuoXiaoYong
School: Zhengzhou University
Course: Condensed Matter Physics
Keywords: RF magnetron sputtering Ag2O film Single- oscillator model Ellipsometric spectra Optical Properties
CLC: O484.1
Type: Master's thesis
Year: 2011
Downloads: 13
Quote: 1
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Abstract


This article using RF magnetron sputtering (RF sputtering) technology, by modulating oxygen argon ratio (OFR = [O2] / [Ar]) substrate temperature (T), and the sputtering power (P) on the glass substrate was prepared a series of single-phase the Ag2O film, and focus on the impact of different process parameters on the the Ag2O film microstructure and optical properties. Use of X-ray diffraction and scanning electron microscopy to characterize the micro-structure and surface properties of the film; using a spectrophotometer, spectroscopic ellipsometry technology and classic single-oscillator model to study the optical properties of Ag2O film, and fitting with the film physical parameters related to the optical properties of the optical constants. On this basis, by building a common oscillator model to study the relationship between the micro-structure and optical properties of the film. The main innovative research results are as follows:. Single phase Ag2O film prepared by RF sputtering technology, thermal decomposition of silver oxide film to reduce the critical temperature to about 200 ° C. The proposed RF sputtering technique prepared Ag2O film instead of single-phase two-phase structure AgxO film may effectively solve AgxO in the direction of short wavelength optical storage, and the magneto-optical storage applications bottleneck. Using RF sputtering technique, at T = 200 ° C, OFR in = 0.667, P = 200 W was prepared having the best LT; 111 GT; the Ag2O film of the preferred orientation of the single-phase. As P is increased from 120 W to 240 W, the LT film; 111 GT; the average grain size will be in the direction of the start is increased to 22.92 nm 27.96nm, then decreases to 26.66 nm, the surface of the film structure from uniform, dense surface structure to a loose, porous structure evolution. 3 by the RF sputtering techniques, a series of Ag2O film prepared by changing T P = 200 W, OFR = 0.667 under the conditions. T ≤ 200 ℃ prepared Ag2O films were shown good lt; 111 gt; preferred orientation. As T was raised to 225 ° C from 100 ℃ crystallization of Ag2O crystallization of the film tends to be deteriorated. As T increases, Ag2O film LT; 111 GT; the average grain size in the direction from increased to 30.60 nm 17.79 nm. The surface structure of the film was showing from uniform, dense surface structure to loose, confusion gully evolution of the structure. The reflectance and transmittance of the film of the transparent region with the T increases gradually decreased, while the absorption rate gradually increased. As T increases, the optical band gap Eg of the film prepared Ag2O, opt overall reduced from 3.25 eV to 2.77 eV. 4 by RF sputtering technique, at T = 200 ° C, P = 200 W under the conditions, a series of Ag2O film prepared by changing OFR OFR = 0.667 under the conditions, wherein preparation of single-phase Ag2O quality of the film Preferably, the film obvious lt; 111 gt; preferred orientation. With the increase of the OFR film LT; 111 GT; direction of the average grain size is increased from 23.65 nm to 28.41nm, the conductivity of the film is the size of the F drop constantly maintained at a magnitude of 10-4. Transmittance rate of the film in the near-infrared region of more than 70%, a sharp decline in the visible region. The optical band gap of between 3.266 eV and 3.107 eV. 5 by means of measurement of elliptical polarization spectroscopy, and Universal vibrator sub model, including a a Tauc-LORENTZ vibrator sub and two Lorentz oscillator sub fitting a single phase Ag2O film's thickness, refractive index, extinction coefficient and the optical band gap parameter. The results show that the normal dispersion occurs anomalous dispersion occurs above 3.3 eV, 2.13 eV, plasma vibration frequency. Eo and Ed are single-oscillator energy and scattering can fit the single-oscillator model parameters Eo and Ed do to 3.546 eV and 13.367 eV. Ag2O film prepared by RF magnetron sputtering ionic compounds. Plasma frequency based on a single harmonic oscillator model, the calculated band gap parameters Ea (?) Ωρ were 0.89 eV and 3.44 eV.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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