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One -dimensional silicon nano- materials and nickel-silicon heterojunction nanowire Preparation and Characterization

Author: ChenYangWen
Tutor: ShaoBingXi
School: Fudan University
Course: Materials Physics and Chemistry
Keywords: Silicon Nanowires Silicon Nanotubes Silicon nano- needle structure Heterojunction nanowire Synthesis Characterization
CLC: TB383.1
Type: PhD thesis
Year: 2008
Downloads: 415
Quote: 0
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Abstract


One-Dimensional Nanostructures silicon material is a new type of semiconductor optoelectronic materials, because it has a stable bulk silicon semiconducting material, energy and contemporary mature microelectronics compatible expected future nanoscale devices can be widely applied. In this paper, the one-dimensional nanostructures of silicon materials for the preparation, characterization and performance testing of. Firstly, the small-diameter high-pressure self-lysis grown silicon nanowires synthesis studies, experiments were prepared with a diameter less than 10nm, Si nucleus is only about 5nm small silicon nanowires by the quantum effect, the sample Raman peaks undergone significant redshift, this small diameter nanowires great research value because it better reflects the performance of specific nanowires. Under cracking conditions at high pressure, adding a small amount of deionized water and a small amount of heat released during the protective gas, the first successful preparation of a self-grown silicon nano acicular. Secondly, the use of a long thermal evaporation of silicon nanowires, experimental silicon nanowires prepared in lengths up to 150μm, this extra-long silicon nanowire applications in nano-electronic devices has more advantages, which can effectively improve the device integration. The paper also silicon-oxygen compounds semi-hollow structure and the diamond structure silicon nanotube synthesis was studied. Silicon nanotubes were successfully prepared following the template method and hydrothermal after the event, another major experimental breakthrough. Silicon nanowires in the synthesis process is to agglomerate, and also accompanied by a number of nano-particles generation, the paper used in THF, emulsifier OP, a solvent such as dimethylformamide, the surface ultrasonic dispersing agent shock conditions to achieve the dispersion of the agglomeration nanowires, with centrifugation, centrifuge at different speeds to achieve a separation of the silicon nanowires. Lastly, the surface of the silicon nanowires nickel plating and nickel-silicon nanowire heterostructures characteristics, namely, after the addition of the silicon oxide layer nanowires its magnetron sputtering nickel plated annealed under different conditions, were obtained Ni / Ni x Si y / Si heterostructure nanowires and NiSi 2 nanowires. By nanowire high-resolution image (HRTEM) analysis to study the nanowire heterostructures annealing behavior, the application of FIB and other laboratory equipment for single heterojunction nanowire manipulation and testing carried out to study the heterojunction nanowire electrical properties, for future nanowire interconnect and device applications in the foundation.

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