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The Fabrication and Application of Inorganic Hollow Micro/Nano Structure

Author: YeLiNa
Tutor: XieYi；John A. Rogers
School: University of Science and Technology of China
Course: Inorganic Chemistry
Keywords: Hollow micro- nano-materials MoS2 Regular geometric shape Single-walled carbon nanotube array Scaling properties Schottky diodes
CLC: TB383.1
Type: PhD thesis
Year: 2010
Downloads: 374
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Abstract

This paper aims to explore the use of simple chemical principles and methods of synthesis of inorganic hollow micro-nano-materials and to study the synthesis of inorganic hollow micro-nano-materials in practical application. This paper presents the system in the liquid phase with the preparation of a variety of novelty regular geometric shape of the MoS2 hollow cage-like multi-level structure of the new synthetic route, and the synthesized MoS2 hollow cage-like multi-level structure of the electrochemical hydrogen storage properties were discussed. This thesis also studied by chemical vapor deposition synthesis of ordered arrays of single-walled carbon nanotube transistor scaling properties; also carried out by the ordered arrangement of single-walled carbon nanotube array consisting of a Schottky diode systematic experimental and theoretical studies. The main contents are summarized as follows 1 of the first use of a self-assembly with a template intermediate crystal synthesized by the method of nano-micron film formed by a double hollow MoS2 multistage cubic cage; wherein this intermediate crystals step synthesis, and does not require any surface-active agent. In this method, based on the Kirkendall effect, K2NaMoO3F3 intermediate cubic crystal is generated in situ and MoS2 initial nucleation and growth as a self-sacrificial template. Perpendicular to the surface of the cube as MoS2 nano-sheet has more activity of the exposed edge, we synthesized cubic cage-like hollow MoS2 multistage when applied to electrochemical hydrogen storage presents a high of 375 mAh g-1 capacity. 2 of MoS2 first made of a synthetic multi-hollow cage-like structure versatility route, based on the use of self-assembled binding Kirkendall effect surfactant / molybdate crystals as template complex precursor synthesized by the method a large variety of new with regular geometric shape of MoS2 multistage hollow cage-like structure. Having a cubic structure formed in situ surfactant / molybdate complex precursor crystals of molybdenum oxyanion tetrabutylammonium cations and periodically arranged in the interaction, such precursor crystals in the next multi-hollow MoS2 cage-like structure contribute to the formation of the molybdenum source and the important role of the template. We NaSCN and by changing the concentration of the surfactant system further crystal growth regulator precursor precursor crystal habit and the degree of branching structure controllable synthesis of different morphologies surfactant / molybdate complex precursor crystals . Three of the systems studied by the chemical vapor deposition synthesis of ordered arrays of single-walled carbon nanotube transistor scaling properties, revealing the path length and the dependencies between the device characteristics and channel resistance and contact resistance in devices operate with different roles. The results shown here used by the path length and the diameter of single-wall carbon nanotubes within two parameters, source and drain electrodes of transistors formed rests Pd showing contact resistance and the gate voltage independent of the effective ohmic contact, but the source the drain electrode of Au chosen by the contact resistance of the transistor have largely been gate voltage regulation. Derived metals and semiconducting carbon nanotubes and semiconducting carbon nanotubes contact resistance mobility and previously reported single CNT test structure corresponding results are consistent. 4 by the ordered arrangement of single-walled carbon nanotube array Schottky diode composed a systematic experimental and theoretical studies. Taking into account the current rectifying the basic physical properties, we have created a simple physical model, the physical model can adequately explain the single carbon nanotubes and carbon nanotube array device electronic properties. Since the presence of metal nanotubes diverted, with this single-walled carbon nanotube prepared Schottky diode array is defined as the maximum current to the minimum current ratio of the rectifier is low. Voltage via a one-way scanning process can get rid of these metals nanotubes, thereby obtaining a carbon nanotube with a high rectification ratio array device. Further analysis showed that the passage resistance of the diode instead of the inherent characteristics of carbon nanotubes limiting device path lengths of up to 10μm rectifying rate

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