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Discharge Properties of Unbalanced Magnetron Sputtering System and Application of TiN_x Films Deposition

Author: MouZongXin
Tutor: LiGuoQing
School: Dalian University of Technology
Course: Surface Engineering
Keywords: Plasma Film Magnetic mirror Magnetron sputtering Titanium nitride
CLC: TB43
Type: PhD thesis
Year: 2006
Downloads: 536
Quote: 0
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Abstract


Unbalanced magnetron sputtering deposition techniques (Unbalanced Magnetron Sputtering, UMS) received extensive attention, can be relatively high ion / atom arrives ratio (Ion-to-atom Arrival Ratio, IAR), the relatively low temperature of the matrix deposition of dense structure film deposition parameters optimized magnetic state. Structure - regional model (Structure-Zone-Model, SZM) contains the key factors of the deposition process, still need to determine the relationship between the unbalanced magnetron sputtering deposition technique discharge parameters and deposition parameters, in-depth study of its discharge deposition mechanism, through the establishment of precise theoretical model to control the discharge and deposition process, in order to meet the growing application requirements. A key factor in the distribution of the magnetic field of the sputtering target non-balanced magnetron sputtering system. Formed by enhancing the magnetic pole of the sputtering target outside of the magnetic field distribution of the non-equilibrium, it is possible to confine the plasma, enhanced ionization; magnetic mirror effect brought about by the magnetic field gradient enhancement charge leads, the system performance is improved. Circular planar magnetron sputtering target internal magnetic poles have certain unbalanced As used herein, constitute a permanent magnet unbalanced magnetron sputtering target (Permanent Magnet Unbalanced Magnetron Sputtering); strengthen the system by attaching a coaxial coil unbalanced characteristics to form a coaxial magnetic field constraints unbalanced magnetron sputtering target (Coaxial Please refer to product description. Solenoid confining Unbalanced Magnetron SixGe1 - of). In this paper, two such contrast with each other system to study the impact of the discharge characteristics and deposition characteristics of coaxial magnetic field changes. Langmuir probe launch probe plane electrode and emission spectra of the plasma parameters of the deposition area and coaxial magnetic field (Coaixial Solenoid) the influence of these parameters. Coaxial magnetic field, the electron temperature of the deposition area, the plasma density and ion saturation current density has been significantly improved, and help to improve the quality of the film; deposition rate first increases with the sputtering power, continue to improve the sputtering power, the deposition rate decreases ; bound by the magnetic field due to the electron, the deposition area of ??the plasma potential is reduced; coaxial magnetic field to improve the stability of the system and discharge efficiency and a low pressure deposition process. The circular planar electrode in the relationship between the axially different positions of saturated ion current (Saturation Ion Current) and coaxial coil current, the discharge current density, spatial position. Experimental results show that the coaxial magnetic field significantly affect the flux collect current density, enhanced coaxial magnetic field causes the the saturated ion flux reached in the distance cathode position 200mm above 9.5mA/cm ~ 2, stable saturation value is reached, no longer subject to a magnetic field, and discharge current impact. Systematic experimental study on the basis of the theoretical study of coaxial magnetic field of a circular planar magnetron sputtering system discharge characteristics and ion beam. According to the Child's law coaxial magnetic field unbalanced magnetron sputter deposition system voltage characteristics affect the basic law. According to the characteristics of the distribution of ions in the deposition process, using magnetic fluid theory method, created in response to

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