Dissertation > Excellent graduate degree dissertation topics show

Preparation and Optoelectronic Properties of ZnO Films

Author: PengFuChuan
Tutor: LaiFaChun
School: Fujian Normal University
Course: Condensed Matter Physics
Keywords: ZnO film ZnO: Ag films oxygen partial pressure optical and electrical properties
CLC: O484.4
Type: Master's thesis
Year: 2011
Downloads: 27
Quote: 0
Read: Download Dissertation

Abstract


Zinc oxide (ZnO) film has been widely used in transparent conducting films and gas sensors because of its unique optoelectronic properties. The properties of ZnO film are strongly dependent on preparation techniques which include substrate temperature, oxygen partial pressures (OPP), annealing process. In the dissertation, ZnO films have been prepared by magnetron sputtering and E-beam evaporation methods. The main contents include:Firstly, ZnO films with different OPP were deposited on quartz substrates by RF magnetron sputtering. The surface roughness and carrier concentration decrease as OPP increases, but the carrier mobility and resistivity increase. The average transmittance in visible spectra region of all samples is higher than 83%. The refractive index increases, extinction coefficient and optical band gap decrease as the increase of OPP.Secondly, Ag doped ZnO (ZnO:Ag) thin films were deposited on n-Si (100) substrates by E-beam evaporation technique. The films were annealed at temperature between 500 and 800℃for 4 hours in low oxygen pressure. When the annealing temperature increases from 500℃to 800℃, the crystalline size increases from 12.37 nm to 32.36 nm, ultraviolet emission peak shifts to short wavelength, the carrier concentration increases and resistivity decreases.Thirdly, ZnO films were deposited on p-Si (111) substrates which had been coated a S1O2 layer to fabricate n-ZnO/SiO2/p-Si heterojunctions.Ⅰ-Ⅴcurves show all the heterojunctions exhibit rectification characteristics and changed obviously under the light. The heterojunctions with no SiO2 layer has a better photoconductive with sensitivity of 1.531. Under reversed bias, the intensity of potential barrier increases with the increase of SiO2 thickness, and potential barrier has efficiently blocked electron tunneling which make the heterojuction has a better rectification characteristic.

Related Dissertations

  1. The Preparation and Study of In-ga-zn-o(IGZO) Thin Film,TB383.2
  2. Optimization of the Culture System on Kunming Mouse ESC,Q813
  3. Effect of Zn Buffer Layer on the Structural and Optical Properties of ZnO Thin Films,O484.41
  4. Effect of Doping with Co and/or Sn on Crystal Structures and Properties of ZnO Thin Films,O484.1
  5. Preparation and Properties of Ag ~, Li ~ and Al ~ ( 3 ) co-doped ZnO films,TB383.2
  6. The Structural and Optical Properties of Al Doped ZnO Thin Film by DC and RF Magnetron Sputtering System,O484.1
  7. Preparation and Electrical Properties of ZnO/BaTiO3 Hetero-structure Grown by Chemical Solution Deposition （CSD ）,O484.1
  8. Density Functional Theory Study on Energy Band and Density of States of ZnO,O614.241
  9. Preparation and Industrial Production Feasibility Analysis of Sheet Zinc Oxide Single Crystal,O614.241
  10. Study of the Preparation and Properties of ZnO:Sn(TZO) Thin Films Prepared by Sol-gel Technique,TB383.2
  11. A Study of Change of Brain Tissue Partial Pressure of Oxygen in the Course of Mild Hypothermia Treatment of Severe Traumatic Brain Injury,R651.15
  12. Preparation and Phase Transition Properties of VO2 Thin Films by Reactive Magnetron Sputtering,O484
  13. Research on the PECVD Fabrication and Photovoltaic Performance of Transparent Conductive AZO (ZnO: Al) Film,O484
  14. Fabrication and Properties of Nano-ZnO Thin Films Prepared by Sol-Gel Process,TB383.1
  15. Investigation on P- and Sb-doped p-type ZnO Thin Films,TB43
  16. The Growth of Arsenic-doped p-type ZnO Thin Films and the Study of Electroluminescence Emission from ZnO/GaAs Heterojunctions,TN304.05
  17. The Opto-Electronic Properties and Application of Ga(In)NAs,O472
  18. Preparation and optical properties of TiO_2 film,O484
  19. Sol - gel prepared ZnO doped conductive film,TB383.2
  20. Influence of Ge Doping on Structure and Optics Properties of ZnO Films,O484

CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > The nature of the films
© 2012 www.DissertationTopic.Net  Mobile