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Effect of Seed Layer on Microstructure and Porperties of BiFeO3 Thin Film

Author: TianHe
Tutor: LiYiBin
School: Harbin Institute of Technology
Course: Materials Science
Keywords: Sol - gel method . BiFeO3 film Seed layer Leakage current density
CLC: TB383.2
Type: Master's thesis
Year: 2011
Downloads: 18
Quote: 0
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Abstract


The more iron material refers to both the ferroelectric and ferromagnetic properties, the properties of the material of two or more iron elasticity. Among the large number of single-phase multiferroic materials, BiFeO 3 ferroelectric and ferromagnetic properties at room temperature, and potential applications in ferroelectric memory. Theoretically, BiFeO , 3 excellent ferroelectric properties experiments confirmed the BiFeO 3 ferroelectric poor performance of only a few units, remanent polarization, which is very important reason is that the leakage current of the film BiFeO 3 . In this paper, adding a layer between the bottom electrode and BiFeO 3 film SrTiO 3 seed layer to achieve not only reduces the leakage current and improve BiFeO 3 films The purpose of the degree of crystallinity. The low-cost preparation techniques - sol-gel method, add SrTiO 3 seed layer conducive BiFeO 3 film nucleation and crystallization process between the film and the substrate improve the surface morphology and the grain size is increased, induced by generating texture and reduce BiFeO 3 film leakage current. Experimental Bi (the NO 3 ) 3 · 5H 2 O, Fe (NO 3 ) 3 · 9H 2 O, Sr (NO 3 ) 2 and Ti (OC 4 H 9 The) 4 as raw material, ethylene glycol monomethyl ether solvent configuration sol. Configuration, the sol 5% increase of the Bi (NO 3 ) 3 · 5H 2 O, the molar amount of the compensation film in the calcined and annealing the volatile Bi element. Preparation of different thickness of SrTiO 3 seed layer using the sol-gel method. BiFeO 3 films annealed for 5 minutes at 650 ℃ containing seed layer and without the seed layer. By XRD, AFM, XPS study seed layer BiFeO 3 film microstructure and chemical state law elements using a ferroelectric measuring instrument seed layer of BiFeO 3 film conductive mechanism and ferroelectric properties investigated. XRD and AFM confirmed, of SrTiO 3 seed layer added only caused BiFeO 3 crystallization of the change in direction of the film, the crystallization of the film by the texture (010) into (110 ), while improving the degree of crystallinity of the film. The SrTiO 3 seed layer added and not cause the BiFeO 3 thin film phase structure changes, also generate secondary phase. XPS results of SrTiO 3 seed layer was added also changed BiFeO 3 of Fe valence state, within a certain range, SrTiO 3 Seed layer can reduce the BiFeO 3 concentration of the oxygen vacancies. SrTiO 3 seed layer the BiFeO 3 leakage current density of the film, conductive mechanism and ferroelectric properties also have a huge impact, with SrTiO 3 increase in the thickness of the seed layer, the leakage current density of the film decreased, conduction mechanisms corresponding change, however, when the seed layer reaches a certain thickness, the BiFeO 3 film but also improves the leakage current density. Meanwhile, SrTiO , 3 seed layer caused BiFeO 3 changes in the behavior of the polarization of the film, as the seed layer thickness increases, BiFeO 3 increase of the remanent polarization of the films.

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