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LaAMnO (A = Ca, Ba, Sr, Pb) material because of its large super giant magnetoresistance effect, for the production of light detection and the importance of magnetic materials and electronic devices attracted widespread attention. PROCEEDINGS other study found that Ag-doped epitaxial LCMO films on metal - insulator transition temperature and thermal signals have an important impact. The Ag-doped doping mechanism and the different electronic devices on the magnetic properties of thermoelectric systems need to do thorough research. This paper by the solid phase method and chemical coprecipitation of La2/3Ca1/3MO3: Agx (LCMO: Agx, where, x is defined as the percentage of Ag mol, x = 0.00,0.01,0.05,0.10,0.20,0.30,0.40 .) polycrystalline targets and thin film materials. Experiment by improving the sintering process, adjusting the amount of Ag doping, doping mechanism of Ag and Ag on the TM-I temperature Tp influence to obtain maximum effect LIV preparation and Ag doping dose Meanwhile, XRD, RT, AFM analysis tools, such as testing for Ag doping and the association between LIV signal mechanism. Solid-phase method Series: solid phase sintering using a LCMO: Agx polycrystalline target. XRD patterns of samples prepared are pure display of pseudo-cubic perovskite phase structure, and with the increase in the amount of Ag doping, a and b-axes in the range 0 ≤ x ≤ 0.40 has a slight fluctuation; another RT curve display, 0 ≤ x ≤ 0.05, the metal - insulator transition temperature (Tp) began to increase rapidly, 0.05 lt; x ≤ 0.40 is gradually slowing down, a maximum of 192 K, which is more than chemical coprecipitation polycrystalline target (273 K) by about 80 K. By pulsed laser deposition (PLD) between 0 ° and 15 ° LaAlO3 (100) single-crystal substrates prepared LCMO: Agx epitaxial film; through a single change in the amount of Ag doping, coating time, oxygen pressure and annealing temperature annealing, research various growth conditions for thin film deposition. X-ray diffraction and ω-θ rocking curve analysis showed that the films were prepared along the [00l] growth direction, and the crystal quality are good. In addition, with Ag doping increases, the slope grown on LCMO: Agx film laser induced voltage effect (LIV) of the Up value first increases and then decreases, x = 0.05 maximum, x = 0.10 When the minimum, LIV signal response time t is just the opposite. Coprecipitation Series: sintered by chemical coprecipitation prepared LCMO: Agx polycrystalline target. XRD patterns of samples prepared are pure display of pseudo-cubic perovskite phase structure; another target prepared by RT curve shows the Tp reached 275 K, and the change is very steep. Where, x = 0.40 sample temperature coefficient of resistance TCR% to 28%, the current literature found no reports of a higher than this value. By PLD 0 ° and 15 ° LaAlO3 (100) single crystal substrates by the LCMO: Agx epitaxial film; studied the growth of the oxygen pressure, growth temperature, laser power, laser frequency, annealing and annealing temperature on oxygen pressure Films effects. Systematic study of the growth of oxygen pressure on LCMO: Agx electrical properties and LIV effects, the results show: the existence of optimal growth oxygen pressure makes LCMO: Agx film with the highest Tp and maximum LIV signal; there is a critical growth oxygen pressure makes LCMO: Agx film with critical phase (with a duplex structure)
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