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Study on the Structural and Magnetic Properties of Ge/Si Based Diluted Magnetic Semiconductor Films

Author: ZhaoWei
Tutor: HouDengLu
School: Hebei Normal
Course: Theoretical Physics
Keywords: Diluted magnetic semiconductors Ion implantation Codoped Ferromagnetic
CLC: O472.5
Type: Master's thesis
Year: 2010
Downloads: 118
Quote: 0
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Abstract


With the increasing demand for information, the traditional information transmission and storage technologies can not meet the needs of the people, this time, the charge and spin of the electron in one of diluted magnetic semiconductor materials, become the people most interested in research topics. Many research groups to model theoretically calculated Curie temperature, to study the magnetic mechanism, the experiment also synchronous development to prepare a ferromagnetic semiconductor material having different Curie temperatures. Theoretical and experimental development, making rapid diluted magnetic semiconductor materials research. This work by magnetron sputtering and ion implantation two preparation methods, research co-doped film structure and magnetic properties. First prepared by magnetron sputtering Ge 1-x Mn x films by metal evaporation vacuum arc technology were the Fe ion and Co ion implantation obtained Fe, Mn, the total blending Co, Mn co-doped Ge-based film. XRD structure detected Ge 1-x Mn x cubic lattice structure of the film is of Ge, Co ion implantation still Ge cubic structure, and can effectively inhibit the second phase formation; after the Fe ion implantation Ge 1-x Mn x the film becomes amorphous structure. Impact of different elements of co-doped sample structure. XPS spectra analysis the Ge 1-x the Mn x film in Mn the elements to Mn0 and Mn 3 O 4 in the form presence contributes to the ferromagnetism. Co ion implantation after the sample, Mn atoms is superior in the alternative bit; after the Fe ion implantation of doping the sample Fe and Mn are not in GE alternative bits. Ferromagnetic Co ion implantation after the samples is significantly reduced, the magnetization of the sample after the Fe ion implantation is much larger than the injected sample of Co ions. Fe, Mn doped Ge-based film opens up a wider field of research for the study of the diluted magnetic semiconductor. Vacuum arc technology and Kauffman technology of metal evaporated into the Co ions and N ions into the single crystal n-Si (100) substrate prepared CO, N co-doped Si-based film. XRD detection after injection of the sample did not find that the formation of a second phase, is the structure of the polycrystalline Si. N 2 gas atmosphere of rapid thermal annealing for 5 min at 800 ℃, no change in the lattice structure of the sample. XPS spectra showed that the presence of Co ions in the injected sample after annealing Co 0 form. With the increase of the implantation dose, the magnetization is weakened; also weaken the magnetization of the sample after annealing. Is due to the aggregation Co atoms formed superparamagnetic Co nanoparticles, weakening the ferromagnetism.

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CLC: > Mathematical sciences and chemical > Physics > Semiconductor physics > Semiconductor Properties of > Magnetic properties
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