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The Study of the Morphology of SnO2Nanostructures under Different Annealing Temperature and Different Annealing Time

Author: WangYu
Tutor: LiYuGuo
School: Shandong Normal University
Course: Microelectronics and Solid State Electronics
Keywords: carbon thermal evaporation SnO2nanostructures luminescence properties theVLS growth mechanism controlled growth
CLC: TN304.21
Type: Master's thesis
Year: 2014
Downloads: 3
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Abstract


Semiconductor materials is a kind of materials who has semiconductor performance，can beused for production of semiconductor devices and electronic materials of integrated circuits.Especially when the semiconductor material reaches nanometer order of magnitude，thenano-scale semiconductor materials can appear many special physical properties caused byquantum size effect，small size effect，surface effect，quantum tunnel effect and so on，such asoptical performance，photoelectric conversion performance，photocatalytic performance，gas-sensing properties and so on，has been widely used in optoelectronic devices，storagebattery，solar energy. As an important semiconductor material，the SnO2has widely used in thefield of electronics and microelectronics.In the paper，As Sn powder for raw material and SnO powder for raw materialrespectively，through carbon thermal evaporation method，different SnO2nanostructures hasbeen prepared by CVD method under different annealing temperature and different annealingtime，then through the scanning electron microscope (SEM)，electron microscope (TEM)，X-raydiffraction (XRD) and Photoluminescence(PL)， the SnO2nanostructures have beencharacterized，their luminescent properties has been explored at the same time，then we discussedthe growth mechanism of SnO2nanostructures，we also found the morphology of SnO2nanostructures have relationship with annealing temperature and annealing time，differentannealing temperature and annealing time have important effects to the morphology of SnO2nanostructures，so you can select a specific annealing temperature and annealing time to realizethe controllable growth of SnO2nanostructures，getting good performance of nanostructures. Theexperimental content as follows:(1) Sn powder and carbon powder were mixed，then by using Au for catalysts，under theconstant annealing temperature of900℃， different SnO2nanostructures were preparedrespectively for annealing time of30min，60min，90min，120min. Then by using scanningelectron microscope(SEM)，transmission electron microscopy(TEM)，X-ray diffraction(XRD)，the surface morphology of SnO2nanostructures were characterized.(2) Sn powder and carbon powder are mixed，then by using Au for catalysts，under the constant annealing temperature of1000℃， different SnO2nanostructures were preparedrespectively for annealing time of30min，60min，90min，120min. Then by using scanningelectron microscope(SEM)，transmission electron microscopy(TEM)，X-ray diffraction(XRD)，the surface morphology of SnO2nanostructures were characterized， then by usingPhotoluminescence(PL)，its luminescence properties was researched，the peak of397nm iscaused by structural defects or luminescent centers such as nanocrystals or defects，the peak of585nm is caused by oxygen vacancies. Above all，the growth mechanism of SnO2nanostructureswere analyzed，and found which is comply with the VLS growth mechanism.(3) Sn powder and carbon powder were mixed，then by using Au for catalysts，under theconstant annealing temperature of900℃，different SnO2nanostructures were prepared forannealing time of30min，60min，90min，120min. Then by using scanning electronmicroscope(SEM)，transmission electron microscopy(TEM)，X-ray diffraction(XRD)，thesurface morphology of SnO2nanostructures were characterized.(4) SnO powder and carbon powder are mixed，then by using Au for catalysts，under theconstant annealing temperature of1000℃，different SnO2nanostructures were prepared forannealing time of30min，60min，90min，120min. Then by using scanning electronmicroscope(SEM)，transmission electron microscopy(TEM)，X-ray diffraction(XRD)，thesurface morphology of SnO2nanostructures were characterized， then by usingPhotoluminescence(PL)，its luminescence properties was researched. Above all，the growthmechanism of SnO2nanostructures were analyzed, and found which is comply with the VLSgrowth mechanism.(5) Through the above four groups of experiments，we discussed the effect of differentannealing temperature on SnO2nanostructures and the he effect of different annealing time onSnO2nanostructures．

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor > Oxide semiconductor
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