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65nm high-performance process temperature selective silicon-germanium epitaxial technology

Author: ZouJun
Tutor: YuJun
School: Fudan University
Course: Electronics and Communication Engineering
Keywords: 65nm CMOS Hypothermia Selective Silicon-germanium epitaxial Source / drain regions, etching X-ray diffraction techniques
CLC: TN304.054
Type: Master's thesis
Year: 2009
Downloads: 21
Quote: 0
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Abstract


Currently , the semiconductor mainstream technology has entered the nanometer era, CMOS logic process also encountered growing challenges . In this paper, the most state-of-the-art semiconductor industry in China , 65nmCMOS logic at the international forefront of high-performance process in key technology in low temperature selective germanium silicon epitaxial growth technology and related device structure improvement and innovation . The main contents of this paper and the results are as follows : ( 1 ) systems research 65nm high-performance process flow temperature selective silicon germanium technology , critical process parameters , specifically made ??experimental selective germanium concentration , temperature aspects argumentation and theoretical research . (2 ) selective silicon-germanium epitaxial growth 65nm process requirements for the growth of surface is very demanding and very difficult to control , so how to improve the selective silicon-germanium epitaxial surface cleanliness and how to make silicon germanium surface treatment is more suitable for the manufacture of semiconductor industrialized production become a difficult 65nm process R \u0026 D . \(3) due to the source / drain regions selective silicon-germanium epitaxial 65nm process , the CMOS device structure and process of revolutionary change , the original device structure and process is completely unable to meet the requirements of the 65nm process , this article proposed new process and CMOS device structures for selective silicon germanium technology . Composed of silicon nitride and silicon oxide gate protection sacrificial layer \65nm high-performance process research and process optimization the world important research topic in the field of semiconductor manufacturing , and studied in this paper has a good theoretical significance and high practical value . Associated process research with the advanced nature of the international and the research results have been applied in the mass production of the 65nm process .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > General issues > > Epitaxial growth
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