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Porous low kMSQ Preparation and Mechanical Properties

Author: TangZuo
Tutor: HuYiFan
School: Huazhong University of Science and Technology
Course: Optics
Keywords: Dielectric material Porous O-MSSQ Sol-gel method Pore Mechanical properties
CLC: TB383.4
Type: Master's thesis
Year: 2009
Downloads: 5
Quote: 0
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Abstract


To meet the needs of modern life , the degree of integration of electronic products greatly improved , so the circuit components also will continue to reduce the size of the circuit multilayer wiring layer capacitance and wire resistance have increased , which makes the wire resistance R and capacitance C between layers produced by RC delay increases , limiting the overall electronic products high-speed performance , but also increase energy consumption. Devices or integrated circuits to minimize the dielectric material used for insulation of the dielectric constant from one side to effectively solve this problem. Current international main way to reduce the dielectric constant is the use of silicone composite materials to replace the traditional SiO2, and the introduction of a porous structure . Our group has long been engaged in a porous O-MSSQ materials research and prepare a high porosity porous O-MSSQ film , the dielectric constant of up to 2.0 or less. However, with the improvement of the porosity , the mechanical properties decreased. This paper focuses on the incorporation of porogen mechanical properties of the material . Measure the mechanical properties of materials is good or bad is the most important indicator of the elastic modulus and hardness ratio E / H. In this paper, β- cyclodextrin as porogen by sol - gel method and rotation were prepared by spin coating a porous O-MSSQ aerogels and film material , and through a number of tests and characterization methods systematic study of its surface morphology , microstructure , thermal stability and mechanical properties. Observed by SEM tests show that this experimental porous O-MSSQ film surface smooth, flat , uniform thickness , and no holes collapse. After nanoindentation tests found that if the content of the porogen too , will reduce the material 's resistance to external force , that will weaken the mechanical properties of materials . Nevertheless, the elastic modulus E is the average value of the integrated circuit is still greater than the general dielectric layer of the required minimum value - 7.0Gpa. Moreover , the test results show that with the increase of film thickness , the elastic modulus is to be further improved. From the porous O-MSSQ airgel BET test results, our materials in a large range of pore size distribution of pores , pore size is not well controlled , which is the need for further improvement.

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