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The Investigation of the Structures and Performances of InAsSb/InAlSb Heterjunction Infrared Photoconductive Film
Author: ZhangShuHui
Tutor: LiHongTao
School: Harbin Institute of Technology
Course: Materials Physics and Chemistry
Keywords: MBE InAsSb/ InAlSb buffer layer NBN structure
CLC: O484.1
Type: Master's thesis
Year: 2008
Downloads: 45
Quote: 1
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Abstract
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Molecular Beam Epitaxy (MBE)has been used to grow InAsSb/InAlSb hetero-layer film on GaAs (001)substrate. The investigation of InAsSb hetero-layer film is based on the structure of nbn, since it can reduce the dark current, and increase the detectivity. In the thesis, some basic work is done for it. The embodying is followed.The reflection high-energy electron diffraction (RHEED) was performed to monitor the surface of InAsSb in-situ during the epitaxial growth. In order to deal with large mismatch (14.6% at room temperature) between GaAs and InAsSb, a GaAs buffer and an InAsSb buffer are deposited firstly. The barrier material of nbn is undoped InAlSb.The atomic force microscope (AFM), double crystals X-ray diffractermeter (DCXRD), X-ray photoelectricity energy spectrum (XPS), scanning electron microscope (SEM), and transmission electron microscope (TEM) are used for researching surface topography and crystal quality, the results show that the surface is very smooth and the quality of crystal is also very good, but the composition is different from expecting and the density of flaw is not low so the parameters still need to be modulated.In the analysis of IR spectrum, because of ordering, multiple absorbing wave ranges were observed, not only 3~4.5μm and 4.7~7μm, but also 8~14μm. And affected by crystal lattice temperature vibration, the wave range of >15μm is also absorbed.Hall measurement shows that when the temperature is changing the carrier concentration and carrier mobility ratio are higher than that reported. And at definite temperature, the carrier concentration and carrier mobility ratio are not infected by the current.
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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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