Dissertation > Excellent graduate degree dissertation topics show

Study on the Growth of InAlN and the Dots on Its Surface

Author: ChenXueFei
Tutor: LiMeiCheng
School: Harbin Institute of Technology
Course: Materials Physics and Chemistry
Keywords: InAlN CDS Phase separation Nano Island
CLC: TN304.055
Type: Master's thesis
Year: 2009
Downloads: 58
Quote: 0
Read: Download Dissertation

Abstract


As a new material for a new generation of microelectronic devices and optoelectronic devices, III-nitride semiconductor become the forefront of the global semiconductor research and hot. Compared to the first generation of Si and the second generation of GaAs, InP, and the III nitride (AlN, GaN, InN) band gap can be varied within the range of 0.7 to 6.2eV, suitable for use as the entire visible light region and parts of the infrared and ultraviolet optoelectronic devices, particularly light-emitting diodes and laser tube devices. When the In composition of about 17%, an InAlN and GaN lattice matched solved InAlN material growth difficulties. InAlN material, using the spectral reflectance test wavelength, the MOCVD growth of high quality without stress of 17% In component an InAlN / GaN heterostructure materials, and the crystal quality and In composition of the XRD characterization of the double-crystal InAlN material; further validate InAlN material In component; TEM observation InAlN and GaN interface; using AFM characterization material surface morphology. Found that to optimized the In component InAlN materials epitaxial process conditions the growth of 17% of the semi-peak width of 392 \separation, we call InAlN rich In nano-islands. analyzed to increase the density of the nano-islands of the increase in the thickness of the InAlN an InAlN Zhongfu In the formation of the nano-island is due to the stress concentration and separation of the In composition caused. through the study of the quality of the GaN thin film grown on different substrates, revealing the relationship between the buffer layer defects and the InAlN layer nano-islands phase separation of the surface of the epitaxial layer in InAlN further analysis calculated using Cell Dynamical System (CDS) method, by the time evolution of the evolution of the order parameter to simulate the diffusion of the surface of the component in the direction of two-dimensional elements. diffusion coefficient D, the time t and the initial component of fluctuations of the order parameter ψ △ ψ. research that, when the D LT; 0.3 ingredient Fluctuations with D increases slightly increased; When D GT; 0.3 Fluctuations component with the D increases and decreases until it is reduced to zero, the realization homogenization of the surface composition of the InAlN layer; Fluctuations maximum when D = 0.3 when the composition, the phase separation in this case is the most obvious. Fluctuations smaller as the time t increases, the composition of In, In the composition distribution becomes uniform. △ ψ In composition fluctuation maximum, reducing the value of △ ψ can be greatly reduced In the composition fluctuation, effectively controlling the phase separation, to achieve the homogenization of the growth layer. Finally, simulation and experimental results are compared found that the simulated result is consistent with experimental results, as the temperature increases, the increment of time, the component gradually homogenized by calculating analog to control the growth temperature and the growth time, optimize the experimental program expected experimental results, effectively saving experiment time and experimental Resource.

Related Dissertations

  1. A Research and Development for Single Chip Micyoco AVR Usage,TP368.12
  2. The Syntheses and Applications of Nanao Cadmium Sulfide Based on the Green Chemical Concept,O614.242
  3. Thermosetting epoxy microsphere preparation, characterization and surface functionalization of,O631.3
  4. Synthesis and Characterization of PHBV Nanofibers Scaffold,R318.08
  5. Fabrication of Zeolite-Loaded TiO2-CdS Composite Semiconductor for Photocatalytic Production of H2,O614.411
  6. Aqueous Synthesis and Property Studies of Citrate-stabilized CdS Quantum Dots,O614.242
  7. Study on Belt-type ZnO Photoanode for Dye-sensitized and Quantum-dot Sensitized Solar Cells,TM914.4
  8. Preparation of porous glass and process parameters affecting its performance study,R318.08
  9. Design and Implementation of Library’s Information Management System of the CD with the Book,TP311.52
  10. Predicting the Phase-separating Patterns of Confined Complex Polymers System,O469
  11. Morphology Controlled Synthesis, Characterzation and Iuminescent Properties Investigation of Several Compounds Micro/nanostructures,TB383.1
  12. The Preparation and Characterization of CdS, ZnS and ZnXCd1-XS Nanomaterials,TB383.1
  13. Morphology Control of CdCO3 and Preparation of CdS/CdCO3 Composite Materials,TB331
  14. Preparation of CdS-based Composite Nano-fluorescence Probes and Their Applications,O614.242
  15. Synthesis and Water-soluble Modification of Quantum Dots,O649
  16. A Cognitive Approach to "Trap-setting" Cell Phone Messages,H052
  17. Research on Ad Hoc Network Clustering Algorithms Based on Graph Theory,TN929.5
  18. Fabrication and Photovoltaic Effect of CdS/Si-NPA Nanoheterojunction Array,TM914.4
  19. Study of Encapsulation of DBS-Arsenazo, Cadmium Sulfide in Nanoscale SBA-15,O561
  20. Preparation and Characterization of Ordered Mesoporous CMK-5 and MWNTs/metal Sulfide Composites,TB383.1
  21. Synthesis and Properties of One-dimensional CdS Nanowire Arrays,TB383.1

CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > General issues > > Semiconductor thin film technology
© 2012 www.DissertationTopic.Net  Mobile