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The Preparation and Optoelectronics Properties Research of GZO Thin Film

Author: WangXiaoWei
Tutor: LiChenHui
School: Huazhong University of Science and Technology
Course: Materials Science
Keywords: GZO thin films Transparent Conductive Oxides Structural properties Resistivity Visible light transmittance
CLC: TB383.2
Type: Master's thesis
Year: 2011
Downloads: 55
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Abstract

ZnO-based transparent conductive oxide thin films have excellent optical and electrical properties. ZnO thin films doped with Ga（GZO） has two advantages comparing to AZO thin film. Firstly, the crystal lattice distortion energy of the film is relatively small. What’s more, GZO films prepared at room temperature have excellent electrical and optical properties. This paper selected magnetron sputtering to prepare GZO thin films. In this paper, self-made GZO oxide targets have been used in FJL560 magnetron sputtering and ion plating equipment instrument to prepare transparent conductive film.By changing the sputtering process parameters （deposition time, substrate temperature, sputtering pressure, target substrate distance and sputtering power）, we have studied the influences of the process parameters to the structural properties, electrical properties and optical properties of GZO thin films. Using XRD, SEM, SPM, four-probe and UV - visible spectrophotometer to test various properties of GZO films, through analyzing the data we can summarize the effects to GZO thin film’s properties.XRD, SEM and SPM analysis showed that the GZO films with different sputtering time had （002） direction orientation off excellent at the room temperature. The GZO films had the highest （002） peak intensity at 250℃. If the temperature was elevated, the surface would be smoother. Sputtering pressure could be used to decrease the surface roughness, 0.5Pa time, GZO films’ surface roughness was 5.07nm. The GZO films had （103） diffraction peak under different sputtering power at 350℃.We have found that substrate temperature have great impact on the film’s optical properties. If the substrate temperature was at room temperature, the film’s resistivity was 6.30×10^-3（?）·cm, the transmission was about 85%; when the substrate temperature was at 350℃, the film had the lowest resistivity of 2.15×10^-4（?）（?） cm, and the average visible light transmittance of the film was about 75%. The sputtering time mainly affected the film’s thickness. If the time was too short, the film resistivity would be very high. Sputtering pressure was mainly used to provide the number of electrons that bombard the film surface, therefore it had little influence on the structure and optical properties. If substrate temperature was at room temperature, the target substrate distance would have great influence to the resistivity of GZO films. Sputtering power mainly affected the crystallization quality of GZO films, while low power would affect the grain’s growth; if the power was too high, the sputtering particles would bombard the film surface, which can lead the increase of surface roughness.

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