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Research and Design of SiGe BiCMOS Power Amplifier for WLAN 802.11b/g

Author: TianLiang
Tutor: LaiZongSheng
School: East China Normal University
Course: Microelectronics and Solid State Electronics
Keywords: Power amplifier SiGe BiCMOS WLAN 802.11b / g Output power
CLC: TN722.75
Type: Master's thesis
Year: 2010
Downloads: 119
Quote: 0
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Abstract


The development of wireless communication technology can be said with each passing day , whether it is related to the national economy and national defense , scientific research , medical , industrial and other fields , or people's everyday life communication , shopping , entertainment , transportation and other fields , permeates wireless communication applications . When its increasingly wide application areas , the growing demand for high- and low - band communication appeared to be inadequate , so that the higher frequency RF technology is becoming the focus of research and development . Power amplifier RF system for its key role in the entire wireless transceiver system become critical components that affect the overall system performance merits , and thus also become the focus of various research institutions and manufacturers . The subject on the basis of a detailed investigation of domestic and international power amplifier design and product A used in WLAN 802.11b / g (2.4GHz) frequency band power amplifier design , and pass the test to get a good performance . In this thesis, the content and contributions include : 1) high linearity Class A power amplifier comprising two enlarged structure and design of the the two bias circuit structure , and three impedance matching network . Wherein the bias circuit using a current mirror circuit having a temperature insensitivity , this article uses both the flexibility and the area of ??the T-type matching network for the great difficulty impedance matching network , to achieve a good match . 2 ) based on the 0.18um SiGe BiCMOS process , independent of the layout and design , all devices are chip to achieve a fully integrated . Design optimization emitter grounded amplifier tubes , and large current path - two the amplifying transistor collector \. 3) of the circuit in the on-chip test , a good test result is obtained . S11 and S22 , respectively -17dB and - 30dB , the input and output to achieve a good match ; 4V for the reduction of the maximum output power of 24dBm , fully meet the design requirements . 4) Further, to achieve better circuit investigated effect , on the basis of the fully integrated circuits designed for the circuit version of the package , and corresponding layout , and preliminary tests for the encapsulated chip .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Basic electronic circuits > Amplification technology,the amplifier > Amplifier > Amplifiers: the role of sub- > Power amplifier
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