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The Design of the 1900MHz Radio Frequency Power Amplifier Based on ADS

Author: MengHaiCheng
Tutor: SongJiaYou
School: Zhengzhou University
Course: Circuits and Systems
Keywords: power gain efficiency impedance matching load-pull method RF power amplifier
CLC: TN722.75
Type: Master's thesis
Year: 2010
Downloads: 544
Quote: 0
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Abstract


RF power amplifier is the most important part of communication equipments. The performance of a communication system depends largely on the performance of the RF power amplifier. In addition, RF power amplifier Constitutes a big part of the designing cost. RF power amplifier is always need to input a certern range of Frequencies, output a certain power, and it need to meet certain requirements for the gain and efficiency, etc. Even, specific limits for the circuit size and power supply circuits will be proposed. As work frequency of RF power amplifiers is high, and power of it is large, the work efficiency is one of the main factors to be considered. Meanwhile, working in a large-signal state, the selection of the active device and the circuit designing is different from the designing of a RF amplifier circuit which is working in a small-signal state. Therefore, choose RF power amplifier as a research target has an important practical significance. Two high frequency, small noise figure, and high efficiency GaAs FET from NEC company were used as active devices in this paper, The model of the device were introduced in detail, S parameter method was usd in the simulation and analysis for the gain and stability of the amplifier. And there was a systemically study for the obtain of the best impedance and the designing of the matching circuit in this paper.Using the Agilent ADS software for the simulation and design, Not only can improve the designing speed, but also increase the success probability of the design, and now it’s the primary method of RF circuit designing.In summary, the main works in this paper as follows:1. Proposed a way of the designing for the wide range supply voltage of the RF power amplifier, and have applied it to the RF power amplifier design;2. There was a relevant research for the designing of the RF power amplifier circuit with discrete components, have designed a two-levels RF power amplifier circuit which can be used for the third generation mobile communication;3. Carried out the simulation and optimize for several performance parameters of the amplifier circuit, and proposed the detail parameters of the components are gived the layout of the circuit;4. Gived the problems need to care and advises for the designing of the RF power amplifier with discrete components,

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Basic electronic circuits > Amplification technology,the amplifier > Amplifier > Amplifiers: the role of sub- > Power amplifier
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