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Research on High-performance SiGe HBT Structure Design and Manufacturing

Author: ShuZuo
Tutor: HuHuiYong
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: Strained SiGe HBT Structure Manufacture
CLC: TN322.8
Type: Master's thesis
Year: 2011
Downloads: 93
Quote: 0
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Abstract


The rapid development of modern mobile communication technology , the market increasingly strong demand for low-cost , high - performance RF devices . Currently, almost every one of the world's IC manufacturers , and even some of GaAs as SiGe competitors , have joined the development ranks SiGeHBT . With the the SiGe technology of development , not just analog products , and there will be more digital products using SiGe technology . Based on the basic physical characteristics of strained SiGe material , including the current gain , characteristic frequency , maximum oscillation frequency electrical parameter model . The analyzed SiGeHBT parasitic barrier heterojunction potential barrier occurrence mechanism of the barrier heterojunction barrier impact on the electrical properties of the device , is proposed to suppress parasitic barrier heterojunction barrier effect , i.e. an increase in the collector junction and the emitter junction at the SiGe the intrinsic layer , and in the collector region close to the base region side to the introduction of Ge, the method of forming a homogeneous collector junction . On the basis of the above studies , the use of ISE software the device material physical parameters and the device geometry parameters on the electrical characteristics of SiGeHBT , especially the influence of the frequency characteristics are analyzed to obtain the optimized SiGeHBT device structure . Its characteristic frequency up to 95GHz, the maximum oscillation frequency of 170GHz, the maximum current current gain of 134 . Double the polycrystalline SiGeHBT process the use of non - selective epitaxy to achieve given device structure .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor transistor ( transistor ) > Transistors: Performance points > Bipolar transistor
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