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Analyse of Temperature Field in Heating System for SiC Epilayer Growing

Author: GuoZuo
Tutor: ZhangYuMing；WangWenJun
School: Xi'an University of Electronic Science and Technology
Course: Software Engineering
Keywords: SiC epitaxial growth ANSYS characterization temperaturefield
CLC: TN304.054
Type: Master's thesis
Year: 2011
Downloads: 67
Quote: 0
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Abstract


The Chemical vapor deposition (CVD) is a major method in growing SiC epitaxiallayer currently, and it has been realized that temperature of the reacting chamber is themain factor influencing the quality and the speed of the growth. Since the inductionheating is used in the LPCVD equipment, the heat transfer condition barely changes inthe reacting chamber. That causing the coil’s number of turns and the thickness of thefoundation bed are the most important parameters affect the distribution of thetemperature field.Basing on the dimensional mode of the horizontal hot wall LPCVD established, thesoftware ANSYS was employed in the simulation to establish the finite element modeof the reaction chamber. The coil’s number of turns, the diameter and the thickness offoundation bed are studied and simulated to analyze the influence. Optimization wasdone according to the simulation results.Furthermore, the planetary reaction chamber CVD equipment for SiC epitaxiallayer growing was designed, and according to simulation results, it meets the needs ofthe SiC epitaxial layer growing currently.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > General issues > > Epitaxial growth
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