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Study of Growth Kinetics for Silicon-based Strained Materials Based on CFD

Author: WangChuanBao
Tutor: DaiXianYing
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: Silicon strain material Growth kinetics Computational Fluid Dynamics FLUENT simulation
CLC: TN304.12
Type: Master's thesis
Year: 2011
Downloads: 32
Quote: 0
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Abstract


Shrinking silicon MOS device size with Moore's Law , is now close to its physical limits . Silicon strain materials ( of germanium silicon and strained silicon ) to the high rate of migration , the band structure is adjustable, and the traditional bulk silicon technology compatible with many other advantages , new materials technology to keep the semiconductor industry to continue to follow Moore's Law . The paper discusses the silicon strained material growth kinetics of the principle of a silicon strain gage technology , in-depth discussion of the silicon energy band structure of the strained material and its transmission characteristics , the silicon strained material to explain the principle of improving mobility . Paper -depth study of the boundary layer theory , the CVD growth of silicon strain material Grove theory and Fick's First Law . CVD growth kinetics based on computational fluid dynamics theory , the paper focuses on the computational fluid dynamics in the CVD growth kinetics of the silicon strain material physical parameters of the model . Computational fluid dynamics software FLUENT papers build the reaction chamber cavity model based on RPCVD technology , defines a cavity model of the reaction chamber gas outlet boundary conditions and wall boundary conditions . Using FLUENT software , the thesis simulation of the reaction chamber cavity of the temperature distribution and gas concentration distribution , the pressure distribution and gas velocity vector distribution analysis of the inlet velocity , the tray speed and the reaction chamber pressure on the temperature distribution , density distribution , pressure distribution and velocity vector distribution.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Elemental semiconductors > Silicon
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