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Tin dioxide (SnO 2 ) is a kind of direct bandgap N-type wide band gap semiconductor material, 300K when the band gap of 3.62eV, high resistivity at room temperature, when the generation of oxygen vacancy or doped N-type semiconductor element formed by a conductive properties. Antimony-doped tin dioxide (Antimony doped Tin Oxide, ATO) as the transparent conductive films have excellent electrical properties, optical properties, good stability and high sensitivity, should be widely solar cells, electrochromic materials, radiation resistance static materials, gas sensors, electrode materials and so on. In SnCl 4 · 5H 2 O and SbCl 3 as the main raw material, the use of sol - gel (sol-gel) prepared spherical nano- ATO powder. Respectively, XRD, FTIR, XPS, FESEM and four-point probe resistivity / square resistance tester powder crystal structure, elemental composition, surface morphology and powder resistance were characterized and analyzed, the system examines the calcination temperature and calcination time and Sb doping on the ATO powder crystal structure, grain size, morphology and conductivity properties. Using sol-gel spin coating method with SnCl 4 and SbCl 3 as the main raw material, was prepared light, excellent electrical properties of nano-ATO film. Respectively, using the XRD, FESEM, UV / visible spectrophotometer, fluorescence spectroscopy and four-probe resistivity / square resistance tester film crystal structure, surface morphology, optical transmittance, photoluminescence properties and sheet resistance were Analytical Characterization, the system examines the amount of added ethanol, the solvent, the amount of ultrapure water is added, the calcination temperature, Sb doping and film thickness of the ATO film structure and optical and electrical properties. XRD results show that ATO is obtained (110) preferred orientation of tetragonal structure nanoparticles cassiterite, there was no antimony oxide peaks, indicating no change in the Sb-doped SnO 2 The crystal structure of all of the Sb ions into the SnO 2 to replace a part of the lattice of Sn ions, forming a solid solution. ATO nanoparticles determine the optimal preparation conditions: Sb doping amount of 15 mol%, the resulting precursor was calcined at 1000 ℃ for 3.0 h. ATO nanoparticles resulting tableting resistivity minimum 10.18Ω · cm. Nano ATO optimal conditions for preparing the film: Sb doping amount of 10 mol%, adding two theoretical amount of anhydrous ethanol as solvent, and then added dropwise 1.5 times the theoretical amount of ultra-pure water, the film five times at 650 ℃ calcined 2.0 h. The resulting pale blue nano ATO film has the best performance, a film thickness of about 787.5 nm, sheet resistance of 60.1Ω / □, the visible light transmittance greater than 80%, and a fluorescent properties. Finally, to explore and propose a sol-gel prepared ATO possible reaction mechanism.
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